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一种具有器件级失调消除功能的CMOS-MEMS后端制程2轴洛伦兹力磁力计。

A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation.

作者信息

Sánchez-Chiva Josep Maria, Valle Juan, Fernández Daniel, Madrenas Jordi

机构信息

Electronic Engineering Department, Universitat Politècnica de Catalunya, Jordi Girona 1-3, 08034 Barcelona, Spain.

Laboratoire de Recherche en Informatique (LIP6), Sorbonne Université, 4 place Jussieu, 75005 Paris, France.

出版信息

Sensors (Basel). 2020 Oct 19;20(20):5899. doi: 10.3390/s20205899.

DOI:10.3390/s20205899
PMID:33086559
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7589634/
Abstract

Lorentz-force Microelectromechanical Systems (MEMS) magnetometers have been proposed as a replacement for magnetometers currently used in consumer electronics market. Being MEMS devices, they can be manufactured in the same die as accelerometers and gyroscopes, greatly reducing current solutions volume and costs. However, they still present low sensitivities and large offsets that hinder their performance. In this article, a 2-axis out-of-plane, lateral field sensing, CMOS-MEMS magnetometer designed using the Back-End-Of-Line (BEOL) metal and oxide layers of a standard CMOS (Complementary Metal-Oxide-Semiconductor) process is proposed. As a result, its integration in the same die area, side-by-side, not only with other MEMS devices, but with the readout electronics is possible. A shielding structure is proposed that cancels out the offset frequently reported in this kind of sensors. Full-wafer device characterization has been performed, which provides valuable information on device yield and performance. The proposed device has a minimum yield of 85.7% with a good uniformity of the resonance frequency fr¯=56.8 kHz, σfr=5.1 kHz and quality factor Q¯=7.3, σQ=1.6 at ambient pressure. Device sensitivity to magnetic field is 37.6fA·μT-1 at P=1130 Pa when driven with I=1mApp.

摘要

洛伦兹力微机电系统（MEMS）磁力计已被提议作为当前消费电子市场中使用的磁力计的替代品。作为MEMS器件，它们可以与加速度计和陀螺仪在同一芯片上制造，大大减小了现有解决方案的体积和成本。然而，它们仍然存在灵敏度低和偏移量大的问题，这阻碍了它们的性能。在本文中，提出了一种采用标准互补金属氧化物半导体（CMOS）工艺的后端金属（BEOL）和氧化物层设计的两轴平面外横向场感应CMOS-MEMS磁力计。因此，它不仅可以与其他MEMS器件并排集成在同一芯片区域，还可以与读出电子器件集成。提出了一种屏蔽结构，可消除这类传感器中经常出现的偏移。已对全晶圆器件进行了表征，这提供了有关器件成品率和性能的有价值信息。所提出的器件在环境压力下的最低成品率为85.7%，共振频率fr¯=56.8 kHz，σfr=5.1 kHz，品质因数Q¯=7.3，σQ=1.6，具有良好的均匀性。当以I=1mApp驱动时，器件在P=1130 Pa时对磁场的灵敏度为37.6fA·μT-1。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f402/7589634/bc3c30f68df2/sensors-20-05899-g015.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f402/7589634/d8d18f02641c/sensors-20-05899-g011.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f402/7589634/2a188581a117/sensors-20-05899-g013.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f402/7589634/311c1fc702a7/sensors-20-05899-g005.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f402/7589634/e8d73ef2861b/sensors-20-05899-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f402/7589634/7269059a3711/sensors-20-05899-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f402/7589634/d8d18f02641c/sensors-20-05899-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f402/7589634/c69ac2cdcd9b/sensors-20-05899-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f402/7589634/2a188581a117/sensors-20-05899-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f402/7589634/fdf2d534e635/sensors-20-05899-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f402/7589634/bc3c30f68df2/sensors-20-05899-g015.jpg

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引用本文的文献

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本文引用的文献

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Sensors (Basel). 2018 Jun 30;18(7):2111. doi: 10.3390/s18072111.