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通过后端工艺各向同性蚀刻在180纳米互补金属氧化物半导体技术中实现的谐振微机电系统压力传感器。

Resonant MEMS Pressure Sensor in 180 nm CMOS Technology Obtained by BEOL Isotropic Etching.

作者信息

Mata-Hernandez Diana, Fernández Daniel, Banerji Saoni, Madrenas Jordi

机构信息

Electronic Engineering Department, Universitat Politècnica de Catalunya, Jordi Girona 1-3, 08034 Barcelona, Spain.

Institut de Física d'Altes Energies (IFAE-BIST), Edifici Cn. Facultat Ciències Nord, Universitat Autònoma de Barcelona, Bellaterra, 08193 Barcelona, Spain.

出版信息

Sensors (Basel). 2020 Oct 23;20(21):6037. doi: 10.3390/s20216037.

DOI:10.3390/s20216037
PMID:33114151
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7660321/
Abstract

This work presents the design and characterization of a resonant CMOS-MEMS pressure sensor manufactured in a standard 180 nm CMOS industry-compatible technology. The device consists of aluminum square plates attached together by means of tungsten vias integrated into the back end of line (BEOL) of the CMOS process. Three prototypes were designed and the structural characteristics were varied, particularly mass and thickness, which are directly related to the resonance frequency, quality factor, and pressure; while the same geometry at the frontal level, as well as the air gap, were maintained to allow structural comparative analysis of the structures. The devices were released through an isotropic wet etching step performed in-house after the CMOS die manufacturing, and characterized in terms of Q-factor vs. pressure, resonant frequency, and drift vs. temperature and biasing voltage.

摘要

这项工作展示了一种采用标准180纳米CMOS工业兼容技术制造的谐振式CMOS-MEMS压力传感器的设计与特性。该器件由通过集成到CMOS工艺后端（BEOL）的钨通孔连接在一起的铝制方形板组成。设计了三个原型，并改变了结构特性，特别是质量和厚度，它们与共振频率、品质因数和压力直接相关；同时保持正面相同的几何形状以及气隙，以便对结构进行结构对比分析。这些器件在CMOS芯片制造完成后通过内部进行的各向同性湿法蚀刻步骤进行释放，并在品质因数与压力、共振频率以及漂移与温度和偏置电压方面进行了特性表征。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/f02ddaa8a912/sensors-20-06037-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/930341589068/sensors-20-06037-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/35ff80a668b8/sensors-20-06037-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/dcdf92602247/sensors-20-06037-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/2e230ccef216/sensors-20-06037-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/b07ad0f58977/sensors-20-06037-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/d6e386dd27cc/sensors-20-06037-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/a05dbd51f60a/sensors-20-06037-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/a2e77efbf7a8/sensors-20-06037-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/695fe48492cb/sensors-20-06037-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/f02ddaa8a912/sensors-20-06037-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/930341589068/sensors-20-06037-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/35ff80a668b8/sensors-20-06037-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/dcdf92602247/sensors-20-06037-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/2e230ccef216/sensors-20-06037-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/b07ad0f58977/sensors-20-06037-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/d6e386dd27cc/sensors-20-06037-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/a05dbd51f60a/sensors-20-06037-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/a2e77efbf7a8/sensors-20-06037-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/695fe48492cb/sensors-20-06037-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/05dc/7660321/f02ddaa8a912/sensors-20-06037-g010.jpg

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本文引用的文献

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A high-Q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging.一种基于晶圆级MEMS真空封装的具有玻璃通孔电气互连的高Q值谐振压力微传感器。
Sensors (Basel). 2014 Dec 16;14(12):24244-57. doi: 10.3390/s141224244.