Laboratory for Advanced Interfacial Materials and Devices, Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China.
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China.
Adv Mater. 2018 Aug;30(35):e1801772. doi: 10.1002/adma.201801772. Epub 2018 Jul 19.
The development of a new nanolithographic strategy, named scanning nanowelding lithography (SNWL), for the one-step fabrication of arbitrary high-aspect-ratio nanostructures of metal is reported in this study. Different from conventional pattern transfer and additive printing strategies which require subtraction or addition of materials, SNWL makes use of a sharp scanning tip to reshape metal thin films or existing nanostructures into desirable high-aspect-ratio patterns, through a cold-welding effect of metal at the nanoscale. As a consequence, SNWL can easily fabricate, in one step and at ambient conditions, sub-50 nm metal nanowalls with remarkable aspect ratio >5, which are found to be strong waveguide of light. More importantly, SNWL outweighs the existing strategies in terms of the unique ability to erase the as-made nanostructures and rewrite them into other shapes and orientations on-demand. Taking advantages of the serial and rewriting capabilities of SNWL, the smart information storage-erasure of Morse codes is demonstrated. SNWL is a promising method to construct arbitrary high-aspect-ratio nanostructure arrays that are highly desirable for biological, medical, optical, electronic, and information applications.
本文报道了一种新的纳米光刻策略——扫描纳米焊接光刻(SNWL),用于一步制造任意高纵横比的金属纳米结构。与传统的图案转移和加法打印策略不同,SNWL 利用锋利的扫描尖端通过纳米尺度上的金属冷焊效应,将金属薄膜或现有纳米结构重塑成所需的高纵横比图案,而无需进行材料的减法或加法。因此,SNWL 可以在一步和环境条件下轻松制造具有显著纵横比 >5 的亚 50nm 金属纳米壁,这些纳米壁被发现是光的强波导。更重要的是,SNWL 在独特的擦除已制造的纳米结构并按需将其重写为其他形状和方向的能力方面优于现有策略。利用 SNWL 的串行和重写能力,演示了莫尔斯码的智能信息存储擦除。SNWL 是构建任意高纵横比纳米结构阵列的一种很有前途的方法,这些阵列在生物、医学、光学、电子和信息应用中非常需要。