Centre Interdisciplinaire de Microscopie Électronique (CIME) , École Polytechnique Fédérale de Lausanne (EPFL) , CH-1015 Lausanne , Switzerland.
Nano Lett. 2018 Aug 8;18(8):5167-5171. doi: 10.1021/acs.nanolett.8b02097. Epub 2018 Jul 27.
Exploiting additional degrees of freedom in solid-state materials may be the most-promising solution when approaching the quantum limit of Moore's law for the conventional electronic industry. Recently discovered topologically nontrivial spin textures, skyrmions, are outstanding among such possibilities. However, the controlled creation of skyrmions, especially by electric means, remains a pivotal challenge in technological applications. Here, we report that skyrmions can be created locally via electric field in the magnetoelectric helimagnet CuOSeO. Using Lorentz transmission electron microscopy, we successfully write skyrmions in situ from a helical-spin background. Our discovery is highly coveted because it implies that skyrmionics can be integrated into modern field effect transistor based electronic technology, in which very low energy dissipation can be achieved and, hence, realize a large step forward toward its practical applications.
在接近传统电子行业摩尔定律的量子极限时，挖掘固态材料中的额外自由度可能是最有前途的解决方案。最近发现的拓扑非平凡的自旋织构，即斯格明子，在这些可能性中尤为突出。然而，斯格明子的可控生成，特别是通过电手段实现，仍然是技术应用中的一个关键挑战。在这里，我们报告说，在磁电螺旋磁体 CuOSeO 中，通过电场可以在局部产生斯格明子。我们使用洛伦兹透射电子显微镜，成功地从螺旋自旋背景中现场写入斯格明子。我们的发现非常令人垂涎，因为这意味着斯格明子可以集成到现代基于场效应晶体管的电子技术中，在这种技术中可以实现非常低的能量耗散，从而朝着其实际应用迈出一大步。
