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具有超低能垒的磁电CuOSeO中斯格明子的电场写入与擦除

Electric field writing and erasing of skyrmions in magnetoelectric CuOSeO with an ultralow energy barrier.

作者信息

Huang Ping, Cantoni Marco, Magrez Arnaud, Carbone Fabrizio, Rønnow Henrik M

机构信息

State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, , CN-710049 Xi'an, China.

Laboratory for Quantum Magnetism (LQM), Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.

出版信息

Nanoscale. 2022 Nov 17;14(44):16655-16660. doi: 10.1039/d2nr04399h.

Abstract

Skyrmions are chiral magnetic textures with non-trivial topology, and due to their unique properties they are widely considered as promising information carriers in novel magnetic storage applications. While electric field writing/erasing and manipulation of skyrmions have been recently achieved, quantitative insights into the energetics of those phenomena remain scarce. Here, we report our electric field writing/erasing of skyrmions in magnetoelectric helimagnet CuOSeO utilizing real-space and real-time Lorentz transmission electron macroscopy. Through the quantitavie analysis on our massive video data, we obtained a linear dependence of the number of skyrmions on the amplitude of the applied electric field, from which a local energy barried to write/erase skyrmions is estimated to be per skyrmion. Such an ultralow energy barrier implies the potential of precise control of skyrmions in future spintronics applications.

摘要

斯格明子是具有非平凡拓扑结构的手性磁纹理,由于其独特的性质,它们被广泛认为是新型磁存储应用中很有前景的信息载体。虽然最近已经实现了电场对斯格明子的写入/擦除和操控,但对这些现象能量学的定量见解仍然很少。在这里,我们报告利用实空间和实时洛伦兹透射电子显微镜对磁电螺旋磁体CuOSeO₃中的斯格明子进行电场写入/擦除的研究。通过对大量视频数据的定量分析,我们获得了斯格明子数量与外加电场幅度的线性关系,据此估计每一个斯格明子写入/擦除的局部能量势垒。如此低的能量势垒意味着未来自旋电子学应用中对斯格明子进行精确控制的潜力。

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