Rizzo Daniel J, Veber Gregory, Cao Ting, Bronner Christopher, Chen Ting, Zhao Fangzhou, Rodriguez Henry, Louie Steven G, Crommie Michael F, Fischer Felix R
Department of Physics, University of California, Berkeley, CA, USA.
Department of Chemistry, University of California, Berkeley, CA, USA.
Nature. 2018 Aug;560(7717):204-208. doi: 10.1038/s41586-018-0376-8. Epub 2018 Aug 8.
Topological insulators are an emerging class of materials that host highly robust in-gap surface or interface states while maintaining an insulating bulk. Most advances in this field have focused on topological insulators and related topological crystalline insulators in two dimensions and three dimensions, but more recent theoretical work has predicted the existence of one-dimensional symmetry-protected topological phases in graphene nanoribbons (GNRs). The topological phase of these laterally confined, semiconducting strips of graphene is determined by their width, edge shape and terminating crystallographic unit cell and is characterized by a [Formula: see text] invariant (that is, an index of either 0 or 1, indicating two topological classes-similar to quasi-one-dimensional solitonic systems). Interfaces between topologically distinct GNRs characterized by different values of [Formula: see text] are predicted to support half-filled, in-gap localized electronic states that could, in principle, be used as a tool for material engineering. Here we present the rational design and experimental realization of a topologically engineered GNR superlattice that hosts a one-dimensional array of such states, thus generating otherwise inaccessible electronic structures. This strategy also enables new end states to be engineered directly into the termini of the one-dimensional GNR superlattice. Atomically precise topological GNR superlattices were synthesized from molecular precursors on a gold surface, Au(111), under ultrahigh-vacuum conditions and characterized by low-temperature scanning tunnelling microscopy and spectroscopy. Our experimental results and first-principles calculations reveal that the frontier band structure (the bands bracketing filled and empty states) of these GNR superlattices is defined purely by the coupling between adjacent topological interface states. This manifestation of non-trivial one-dimensional topological phases presents a route to band engineering in one-dimensional materials based on precise control of their electronic topology, and is a promising platform for studies of one-dimensional quantum spin physics.
拓扑绝缘体是一类新兴材料,其体内保持绝缘,同时具有高度稳健的能隙表面或界面态。该领域的大多数进展都集中在二维和三维的拓扑绝缘体及相关拓扑晶体绝缘体上,但最近的理论研究预测,石墨烯纳米带(GNR)中存在一维对称保护拓扑相。这些横向受限的石墨烯半导体条带的拓扑相由其宽度、边缘形状和终止晶胞决定,其特征是具有一个[公式:见原文]不变量(即指数为0或1,表明两种拓扑类别——类似于准一维孤子系统)。预计具有不同[公式:见原文]值的拓扑不同的GNR之间的界面会支持半填充的、能隙中的局域电子态,原则上可将其用作材料工程的工具。在此,我们展示了一种拓扑工程化GNR超晶格的合理设计与实验实现,该超晶格拥有一维排列的此类态,从而产生了原本无法获得的电子结构。这种策略还能直接在一维GNR超晶格的末端设计出新的端态。在超高真空条件下,由分子前驱体在金表面Au(111)上合成了原子精确的拓扑GNR超晶格,并通过低温扫描隧道显微镜和光谱进行了表征。我们的实验结果和第一性原理计算表明,这些GNR超晶格的前沿能带结构(包围填充态和空态的能带)完全由相邻拓扑界面态之间的耦合定义。这种非平凡一维拓扑相的表现为基于对电子拓扑的精确控制来进行一维材料的能带工程提供了一条途径,并且是研究一维量子自旋物理的一个有前景的平台。