Zhang Yong, Lu Jianchen, Gao Lei, Zhao Xin-Jing, Niu Gefei, Geng Xi, Zhang Yi, Li Shicheng, Yang Yuhang, Tan Yuan-Zhi, Du Shixuan, Cai Jinming
Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China.
Faculty of Science, Kunming University of Science and Technology, Kunming, 650500, China.
Nat Commun. 2025 Jul 1;16(1):5988. doi: 10.1038/s41467-025-60916-w.
One- and two-dimensional (1D-2D) heterostructures have drawn growing interest due to their appealing optoelectronic and catalytic properties. Controlling the band alignment of 1D-2D heterostructures is crucial for their large-scale applications, but remains challenging to achieve experimentally. Here, we report a strategy for the atomically precise fabrication of 1D graphene nanoribbon (GNR) homojunctions and a variety of 1D-GNRs/2D-CuSe vertical heterostructures on Cu(111) substrate. By combining scanning tunneling microscopy, non-contact atomic force microscopy characterizations and density functional theory calculations, the entire preparative process is fully visualized. The GNR homojunctions, which bridge the Cu(111) substrate and the semiconducting CuSe monolayer, show a p-n junction characteristic. The hybrid heterostructures display various band alignments, achieved by varying the width and edge topologies of the GNRs, as well as controlling two different semiconducting phases of the CuSe monolayer. This work offers a promising method to precisely synthesize 1D/2D heterostructures with diverse band alignments for applications in high-performance nanodevices.
一维和二维(1D-2D)异质结构因其吸引人的光电和催化特性而引起了越来越多的关注。控制1D-2D异质结构的能带排列对于其大规模应用至关重要,但在实验上实现仍具有挑战性。在此,我们报告了一种在Cu(111)衬底上原子精确制造一维石墨烯纳米带(GNR)同质结和各种1D-GNRs/2D-CuSe垂直异质结构的策略。通过结合扫描隧道显微镜、非接触原子力显微镜表征和密度泛函理论计算,整个制备过程得以完全可视化。连接Cu(111)衬底和半导体CuSe单层的GNR同质结呈现出p-n结特性。通过改变GNR的宽度和边缘拓扑结构,以及控制CuSe单层的两种不同半导体相,混合异质结构展示出各种能带排列。这项工作提供了一种有前景的方法,可精确合成具有不同能带排列的1D/2D异质结构,用于高性能纳米器件应用。