具有高电子亲和力的分子掺杂剂增强有机场效应晶体管的性能

Enhanced Performance of Organic Field-Effect Transistors by a Molecular Dopant with High Electron Affinity.

作者信息

Lu Wanlong, Cao Jingning, Zhai Chenyang, Bu Laju, Lu Guanghao, Zhu Yuanwei

机构信息

Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710054, China.

The High School Affiliated to Xi'an Jiaotong University, Xi'an 710054, China.

出版信息

ACS Appl Mater Interfaces. 2022 May 12. doi: 10.1021/acsami.2c02977.

DOI:10.1021/acsami.2c02977

PMID:35548972

Abstract

Organic field-effect transistors (OFETs) are attractive for next-generation electronics, while doping plays an important role in their performance optimization. In this work, a soluble molecular dopant with high electron affinity, CN6-CP, is investigated to manipulate the performance of OFETs with a p-type organic semiconductor as the transport layer. The performance of the model 2,7-didodecyl[1]benzothieno[3,2-][1]benzothiophene (C12-BTBT) bottom-gate top-contact (BGTC) OFETs is greatly optimized upon doping by CN6-CP, and the field-effect mobility is improved from 5.5 to 11.1 cm V s, with a widely tunable threshold voltage from -40 to +5 V. Improvements in performance also appear in CN6-CP doped BGBC OFETs. As compared with commonly used molecular dopant F4-TCNQ, CN6-CP exhibits excellent doping effects and great potential for organic electronic applications.

摘要

有机场效应晶体管（OFET）对下一代电子产品具有吸引力，而掺杂在其性能优化中起着重要作用。在这项工作中，研究了一种具有高电子亲和力的可溶性分子掺杂剂CN6-CP，以调控以p型有机半导体作为传输层的OFET的性能。通过CN6-CP掺杂，模型2,7-二十二烷基[1]苯并噻吩并[3,2-b][1]苯并噻吩（C12-BTBT）底栅顶接触（BGTC）OFET的性能得到了极大优化，场效应迁移率从5.5提高到11.1 cm² V⁻¹ s⁻¹，阈值电压可在-40至+5 V范围内广泛调节。在CN6-CP掺杂的BGBC OFET中也出现了性能提升。与常用的分子掺杂剂F4-TCNQ相比，CN6-CP表现出优异的掺杂效果以及在有机电子应用中的巨大潜力。