Tayu Masanori, Rahmanudin Aiman, Perry Gregory J P, Khan Raja U, Tate Daniel J, Marcial-Hernandez Raymundo, Shen Yuan, Dierking Ingo, Janpatompong Yurachat, Aphichatpanichakul Suphaluk, Zamhuri Adibah, Victoria-Yrezabal Inigo, Turner Michael L, Procter David J
Department of Chemistry, University of Manchester Oxford Road Manchester M13 9PL UK
Department of Physics & Astronomy, University of Manchester Oxford Road Manchester M13 9PL UK.
Chem Sci. 2021 Nov 29;13(2):421-429. doi: 10.1039/d1sc05070b. eCollection 2022 Jan 5.
A modular approach to underexplored, unsymmetrical [1]benzothieno[3,2-][1]benzothiophene (BTBT) scaffolds delivers a library of BTBT materials from readily available coupling partners by combining a transition-metal free Pummerer CH-CH-type cross-coupling and a Newman-Kwart reaction. This effective approach to unsymmetrical BTBT materials has allowed their properties to be studied. In particular, tuning the functional groups on the BTBT scaffold allows the solid-state assembly and molecular orbital energy levels to be modulated. Investigation of the charge transport properties of BTBT-containing small-molecule:polymer blends revealed the importance of molecular ordering during phase segregation and matching the highest occupied molecular orbital energy level with that of the semiconducting polymer binder, polyindacenodithiophene-benzothiadiazole (PIDTBT). The hole mobilities extracted from transistors fabricated using blends of PIDTBT with phenyl or methoxy functionalized unsymmetrical BTBTs were double those measured for devices fabricated using pristine PIDTBT. This study underscores the value of the synthetic methodology in providing a platform from which to study structure-property relationships in an underrepresented family of unsymmetrical BTBT molecular semiconductors.
一种用于探索不足的不对称[1]苯并噻吩并[3,2 - ][1]苯并噻吩(BTBT)支架的模块化方法,通过结合无过渡金属的普默勒CH-CH型交叉偶联反应和纽曼-夸特反应,从容易获得的偶联伙伴中提供了一系列BTBT材料。这种制备不对称BTBT材料的有效方法使得对其性质的研究成为可能。特别是,调节BTBT支架上的官能团可以调控固态组装和分子轨道能级。对含BTBT的小分子:聚合物共混物的电荷传输性质的研究揭示了相分离过程中分子有序性以及使最高占据分子轨道能级与半导体聚合物粘合剂聚茚并二噻吩 - 苯并噻二唑(PIDTBT)的能级相匹配的重要性。从使用苯基或甲氧基官能化的不对称BTBT与PIDTBT的共混物制备的晶体管中提取的空穴迁移率是使用原始PIDTBT制备的器件所测迁移率的两倍。这项研究强调了合成方法在提供一个平台以研究不对称BTBT分子半导体这一代表性不足的家族中的结构 - 性质关系方面的价值。