Zhang Song, Wang Tingting, Zhang Ziyu, Li Jun, Tu Rong, Shen Qiang, Wang Chuanbin, Luo Guoqiang, Zhang Lianmeng
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070, China.
National Key Laboratory for Shock Wave and Detonation Physics, Institute of Fluid Physics, P.O. Box 919-102, Mianyang 621900, China.
Materials (Basel). 2019 Jan 30;12(3):425. doi: 10.3390/ma12030425.
Direct-current magnetron sputtering (DCMS) was applied to prepare vanadium (V) films on Si substrate. The influence of substrate temperature () and target⁻substrate distance () on phase structure and surface morphology of V films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscope (AFM) and transmission electron microscopy (TEM). The results show that the crystallinity of the V films increases with increasing and decreasing . The film deposited at = 400 °C and = 60 mm exhibits the best crystallinity and <111> preferred orientation with a regular tetrahedral surface morphology. Oxidation behavior of the V thin films has also been studied by X-ray photoelectron spectroscopy (XPS).
采用直流磁控溅射（DCMS）在硅衬底上制备钒（V）薄膜。通过X射线衍射（XRD）、扫描电子显微镜（SEM）、原子力显微镜（AFM）和透射电子显微镜（TEM）研究了衬底温度（）和靶材-衬底距离（）对V薄膜相结构和表面形貌的影响。结果表明，V薄膜的结晶度随升高和降低而增加。在 = 400 °C和 = 60 mm条件下沉积的薄膜具有最佳的结晶度和<111>择优取向，表面形貌呈规则的四面体。还通过X射线光电子能谱（XPS）研究了V薄膜的氧化行为。
