MESA Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands;
Electron Microscopy for Materials Science (EMAT), University of Antwerp, 2020 Antwerp, Belgium.
Proc Natl Acad Sci U S A. 2018 Sep 18;115(38):9515-9520. doi: 10.1073/pnas.1807457115. Epub 2018 Sep 5.
In transition metal perovskites ABO, the physical properties are largely driven by the rotations of the BO octahedra, which can be tuned in thin films through strain and dimensionality control. However, both approaches have fundamental and practical limitations due to discrete and indirect variations in bond angles, bond lengths, and film symmetry by using commercially available substrates. Here, we introduce modulation tilt control as an approach to tune the ground state of perovskite oxide thin films by acting explicitly on the oxygen octahedra rotation modes-that is, directly on the bond angles. By intercalating the prototype SmNiO target material with a tilt-control layer, we cause the system to change the natural amplitude of a given rotation mode without affecting the interactions. In contrast to strain and dimensionality engineering, our method enables a continuous fine-tuning of the materials' properties. This is achieved through two independent adjustable parameters: the nature of the tilt-control material (through its symmetry, elastic constants, and oxygen rotation angles), and the relative thicknesses of the target and tilt-control materials. As a result, a magnetic and electronic phase diagram can be obtained, normally only accessible by A-site element substitution, within the single SmNiO compound. With this unique approach, we successfully adjusted the metal-insulator transition (MIT) to room temperature to fulfill the desired conditions for optical switching applications.
在过渡金属钙钛矿 ABO 中,物理性质主要由 BO 八面体的旋转驱动,通过应变和维度控制可以在薄膜中进行调节。然而,这两种方法都由于商业可用衬底的键角、键长和薄膜对称性的离散和间接变化而存在根本和实际的限制。在这里,我们引入调制倾斜控制方法,通过直接作用于氧八面体旋转模式(即直接作用于键角)来调节钙钛矿氧化物薄膜的基态。通过用倾斜控制层插入原型 SmNiO 靶材料,我们使系统改变给定旋转模式的自然幅度,而不影响相互作用。与应变和维度工程不同,我们的方法可以连续微调材料的性能。这是通过两个独立的可调参数实现的:倾斜控制材料的性质(通过其对称性、弹性常数和氧旋转角度),以及目标材料和倾斜控制材料的相对厚度。结果,可以获得通常只能通过 A 位元素取代才能获得的磁和电子相图,在单一 SmNiO 化合物中。通过这种独特的方法,我们成功地将金属-绝缘体转变(MIT)调整到室温,以满足光学开关应用的理想条件。