Okada Atsushi, He Shikun, Gu Bo, Kanai Shun, Soumyanarayanan Anjan, Lim Sze Ter, Tran Michael, Mori Michiyasu, Maekawa Sadamichi, Matsukura Fumihiro, Ohno Hideo, Panagopoulos Christos
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan.
Divison of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore.
Proc Natl Acad Sci U S A. 2017 Apr 11;114(15):3815-3820. doi: 10.1073/pnas.1613864114. Epub 2017 Mar 24.
Studies of magnetization dynamics have incessantly facilitated the discovery of fundamentally novel physical phenomena, making steady headway in the development of magnetic and spintronics devices. The dynamics can be induced and detected electrically, offering new functionalities in advanced electronics at the nanoscale. However, its scattering mechanism is still disputed. Understanding the mechanism in thin films is especially important, because most spintronics devices are made from stacks of multilayers with nanometer thickness. The stacks are known to possess interfacial magnetic anisotropy, a central property for applications, whose influence on the dynamics remains unknown. Here, we investigate the impact of interfacial anisotropy by adopting CoFeB/MgO as a model system. Through systematic and complementary measurements of ferromagnetic resonance (FMR) on a series of thin films, we identify narrower FMR linewidths at higher temperatures. We explicitly rule out the temperature dependence of intrinsic damping as a possible cause, and it is also not expected from existing extrinsic scattering mechanisms for ferromagnets. We ascribe this observation to motional narrowing, an old concept so far neglected in the analyses of FMR spectra. The effect is confirmed to originate from interfacial anisotropy, impacting the practical technology of spin-based nanodevices up to room temperature.
对磁化动力学的研究不断推动了对全新物理现象的发现,在磁学和自旋电子学器件的发展中稳步前进。这种动力学可以通过电来诱导和检测,在纳米尺度的先进电子学中提供了新的功能。然而,其散射机制仍存在争议。了解薄膜中的机制尤为重要,因为大多数自旋电子学器件是由纳米厚度的多层堆叠制成的。已知这些堆叠具有界面磁各向异性,这是应用中的一个核心特性,但其对动力学的影响仍然未知。在此,我们采用CoFeB/MgO作为模型系统来研究界面各向异性的影响。通过对一系列薄膜进行系统且互补的铁磁共振(FMR)测量,我们发现在较高温度下FMR线宽更窄。我们明确排除了本征阻尼的温度依赖性作为可能原因,而且现有铁磁体的非本征散射机制也无法解释这一现象。我们将这一观察结果归因于运动致窄,这是一个在FMR光谱分析中迄今被忽视的古老概念。该效应被证实源于界面各向异性,对直至室温的自旋基纳米器件的实际技术产生影响。