Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, School of Materials Science and Engineering, and Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, People's Republic of China.
Nanotechnology. 2018 Nov 30;29(48):485203. doi: 10.1088/1361-6528/aae0b8. Epub 2018 Sep 12.
Unbalanced carrier injection is one of the most important reasons for the efficiency roll-off in quantum dot light-emitting diodes. Reducing the electron injection can effectively balance the carrier transport and improve the optoelectronic performance of the device. In this work, a bilayer ZnO electron transport layer was fabricated by twice spin-coating and annealing methods. More than 60% of electrons are effectively blocked by the ZnO interface barrier compared with the standard device, resulting in increasing the maximum luminance of the device from 25 390 to 48 220 cd m and the current efficiency from 1.5 to 3.2 cd A.
载流子注入不平衡是量子点发光二极管效率下降的最重要原因之一。减少电子注入可以有效地平衡载流子输运，从而改善器件的光电性能。在这项工作中，通过两次旋涂和退火方法制备了双层 ZnO 电子传输层。与标准器件相比，ZnO 界面势垒有效地阻挡了超过 60%的电子，从而使器件的最大亮度从 25390cd/m提升至 48220cd/m，电流效率从 1.5cd/A 提升至 3.2cd/A。
