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用于钾离子电池的在柔性氮掺杂碳海绵上外延生长的氢化钛酸钠

Hydrogenated NaTiO Epitaxially Grown on Flexible N-Doped Carbon Sponge for Potassium-Ion Batteries.

作者信息

Li Peihao, Wang Wei, Gong Sheng, Lv Fan, Huang Hanxin, Luo Mingchuan, Yang Yong, Yang Chao, Zhou Jinhui, Qian Chang, Wang Bin, Wang Qian, Guo Shaojun

出版信息

ACS Appl Mater Interfaces. 2018 Nov 7;10(44):37974-37980. doi: 10.1021/acsami.8b11354. Epub 2018 Oct 26.

Abstract

With its inherent zig-zag layered structure and open framework, NaTiO (NTO) is a promising anode material for potassium-ion batteries (KIBs). However, its poor electronic conductivity caused by large band gap (∼3.7 eV) usually leads to low-performance KIBs. In this work, we synthesize the fluff-like hydrogenated NaTiO (HNTO) nanowires grown on N-doped carbon sponge (CS) as a binder-free and current-collector-free flexible anode for KIBs (denoted as HNTO/CS). High-resolution X-ray photoelectron spectroscopy (XPS) and electron spin-resonance spectroscopy (ESR) confirm the existence of Ti-OHs and O vacancies in HNTO. The first-principles calculation discloses that both Ti-OHs and O vacancies are equivalent to n-type doping because they can shift the Fermi level up to the conduction band, thus leading to a higher electronic conductivity and better performance for KIBs. In addition, the N-doped CS can further reinforce the conductivity and avoid the aggregation of HNTO nanowires during cycling. As a result, the as-made HNTO/CS can deliver a capacity of 107.8 mAh g at 100 mA g after 20 cycles, and keep the capacity of 90.9% and 82.5% after 200 and 1555 cycles, respectively, much better than the samples without hydrogenation treatment or N-doped CS and reported KTi O -based materials. Our work highlights the importance of hydrogenation treatment and N-doped CS in enhancing the electrochemical property for KIBs.

摘要

由于其固有的锯齿形层状结构和开放框架,NaTiO(NTO)是一种很有前景的钾离子电池(KIBs)负极材料。然而,其由大带隙(约3.7 eV)导致的不良电子导电性通常会导致KIBs性能不佳。在这项工作中,我们合成了生长在氮掺杂碳海绵(CS)上的绒毛状氢化NaTiO(HNTO)纳米线,作为KIBs的无粘结剂和无集流体的柔性负极(表示为HNTO/CS)。高分辨率X射线光电子能谱(XPS)和电子自旋共振光谱(ESR)证实了HNTO中存在Ti-OHs和氧空位。第一性原理计算表明,Ti-OHs和氧空位都相当于n型掺杂,因为它们可以将费米能级向上移动到导带,从而导致更高的电子导电性和更好的KIBs性能。此外,氮掺杂的CS可以进一步增强导电性,并避免HNTO纳米线在循环过程中聚集。结果,制备的HNTO/CS在100 mA g下循环20次后可提供107.8 mAh g的容量,在200次和1555次循环后分别保持90.9%和82.5%的容量,远优于未经氢化处理或氮掺杂CS的样品以及报道的基于KTi O的材料。我们的工作突出了氢化处理和氮掺杂CS在增强KIBs电化学性能方面的重要性。

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