Lin Li, Deng Bing, Sun Jingyu, Peng Hailin, Liu Zhongfan
Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering , Peking University , Beijing 100871 , P. R. China.
Soochow Institute for Energy and Materials Innovations (SIEMIS), College of Physics, Optoelectronics and Energy , Soochow University , Suzhou 215006 , P. R. China.
Chem Rev. 2018 Sep 26;118(18):9281-9343. doi: 10.1021/acs.chemrev.8b00325. Epub 2018 Sep 12.
Graphene, in its ideal form, is a two-dimensional (2D) material consisting of a single layer of carbon atoms arranged in a hexagonal lattice. The richness in morphological, physical, mechanical, and optical properties of ideal graphene has stimulated enormous scientific and industrial interest, since its first exfoliation in 2004. In turn, the production of graphene in a reliable, controllable, and scalable manner has become significantly important to bring us closer to practical applications of graphene. To this end, chemical vapor deposition (CVD) offers tantalizing opportunities for the synthesis of large-area, uniform, and high-quality graphene films. However, quite different from the ideal 2D structure of graphene, in reality, the currently available CVD-grown graphene films are still suffering from intrinsic defective grain boundaries, surface contaminations, and wrinkles, together with low growth rate and the requirement of inevitable transfer. Clearly, a gap still exits between the reality of CVD-derived graphene, especially in industrial production, and ideal graphene with outstanding properties. This Review will emphasize the recent advances and strategies in CVD production of graphene for settling these issues to bridge the giant gap. We begin with brief background information about the synthesis of nanoscale carbon allotropes, followed by the discussion of fundamental growth mechanism and kinetics of CVD growth of graphene. We then discuss the strategies for perfecting the quality of CVD-derived graphene with regard to domain size, cleanness, flatness, growth rate, scalability, and direct growth of graphene on functional substrate. Finally, a perspective on future development in the research relevant to scalable growth of high-quality graphene is presented.
理想形态的石墨烯是一种二维（2D）材料，由单层碳原子排列成六边形晶格组成。自2004年首次剥离以来，理想石墨烯在形态、物理、机械和光学性能方面的丰富特性激发了巨大的科学和工业兴趣。相应地，以可靠、可控和可扩展的方式生产石墨烯对于使我们更接近石墨烯的实际应用变得极为重要。为此，化学气相沉积（CVD）为合成大面积、均匀且高质量的石墨烯薄膜提供了诱人的机会。然而，与石墨烯的理想二维结构截然不同的是，实际上，目前通过化学气相沉积生长的石墨烯薄膜仍然存在固有缺陷晶界、表面污染和褶皱问题，同时生长速率较低且不可避免地需要转移。显然，在化学气相沉积法制备的石墨烯实际情况（尤其是在工业生产中）与具有优异性能的理想石墨烯之间仍然存在差距。本综述将重点介绍化学气相沉积法制备石墨烯在解决这些问题以弥合巨大差距方面的最新进展和策略。我们首先介绍有关纳米级碳同素异形体合成的简要背景信息，接着讨论石墨烯化学气相沉积生长的基本生长机制和动力学。然后，我们讨论在畴尺寸、清洁度、平整度、生长速率、可扩展性以及在功能衬底上直接生长石墨烯等方面完善化学气相沉积法制备石墨烯质量的策略。最后，对与高质量石墨烯可扩展生长相关的研究未来发展提出展望。
