University of Minho, CMEMS-UMinho, Campus de Azurém, Guimarães, Portugal.
J Biomed Opt. 2018 Oct;23(10):1-7. doi: 10.1117/1.JBO.23.10.105004.
This paper presents a silicon neural probe with a high-selectivity optical readout function and light emitting diodes for neurons photostimulation and fluorophore excitation. A high-selectivity Fabry-Perot optical filter on the top of a CMOS silicon photodiodes array can read the emitted fluorescence, which indicates the neurons physiological state. The design, fabrication, and characterization of the optical filter are presented. The SiO2 / TiO2 based optical filter thin films were deposited by RF sputtering. The performance of the optical filter deposited on the top of the silicon photodiodes array, implemented in the neural probe, was tested through in-vitro fluorescence measurements. The transmittance peak of the fabricated optical filter is 81.8% at 561 nm, with a full width at half maximum of 28 nm. The peak responsivity of the CMOS silicon photodiode with the optical filter deposited on its top is 273.6 mA / W at 578 nm. The in-vitro fluorescence measurements results show a CMOS photodiode current proportional to the fluorophore concentration with a good linearity (R2 = 0.9361). The results validate the use of the neural probe with the high-selectivity optical readout function to determine the presence of different fluorophore concentrations. The development of the device in a conventional CMOS process allows on-chip electronics readout.
本文提出了一种具有高选择性光读出功能和发光二极管的硅神经探针,用于神经元光刺激和荧光团激发。在 CMOS 硅光电二极管阵列的顶部有一个高选择性的法布里-珀罗光学滤波器,可以读取发射的荧光,从而指示神经元的生理状态。介绍了光学滤波器的设计、制造和特性。采用射频溅射法沉积了基于 SiO2/TiO2 的光学滤波器薄膜。通过体外荧光测量测试了植入神经探针中硅光电二极管阵列顶部沉积的光学滤波器的性能。所制备的光学滤波器的透射率峰值在 561nm 处为 81.8%,半最大值全宽为 28nm。顶部沉积有光学滤波器的 CMOS 硅光电二极管的峰值响应率在 578nm 处为 273.6mA/W。体外荧光测量结果表明,CMOS 光电二极管电流与荧光团浓度成正比,具有良好的线性度(R2=0.9361)。结果验证了使用具有高选择性光读出功能的神经探针来确定不同荧光团浓度的存在。该器件在传统的 CMOS 工艺中的开发允许进行片上电子学读出。