Suppr超能文献

单晶电化学揭示了金属纳米线生长的原因。

Single-Crystal Electrochemistry Reveals Why Metal Nanowires Grow.

作者信息

Kim Myung Jun, Alvarez Samuel, Chen Zihao, Fichthorn Kristen A, Wiley Benjamin J

机构信息

Department of Chemistry , Duke University , 124 Science Drive , Box 90354, Durham , North Carolina 27708 , United States.

Department of Chemical Engineering , The Pennsylvania State University , University Park , Pennsylvania 16802 , United States.

出版信息

J Am Chem Soc. 2018 Nov 7;140(44):14740-14746. doi: 10.1021/jacs.8b08053. Epub 2018 Oct 23.

Abstract

Shape-control is used to tune the properties of metal nanostructures in applications ranging from catalysts to touch screens, but the origins of anisotropic growth of metal nanocrystals in solution are unknown. We show single-crystal electrochemistry can test hypotheses for why nanostructures form and predict conditions for anisotropic growth by quantifying the degree to which different species cause facet-selective metal deposition. Electrochemical measurements show disruption of alkylamine monolayers by chloride ions causes facet-selective Cu deposition. An intermediate range of chloride concentrations maximizes facet-selective Cu deposition on single crystals and produces the highest aspect ratio nanowires in a solution-phase synthesis. DFT calculations similarly show an intermediate monolayer coverage of chloride displaces the alkylamine capping agent from the ends but not the sides of a nanowire, facilitating anisotropic growth.

摘要

形状控制被用于调整金属纳米结构在从催化剂到触摸屏等各种应用中的性能,但溶液中金属纳米晶体各向异性生长的起源尚不清楚。我们表明,单晶电化学可以通过量化不同物种导致面选择性金属沉积的程度,来检验关于纳米结构形成原因的假设,并预测各向异性生长的条件。电化学测量表明,氯离子对烷基胺单层的破坏会导致面选择性铜沉积。氯离子浓度的中间范围能使面选择性铜在单晶上的沉积最大化,并在溶液相合成中产生纵横比最高的纳米线。密度泛函理论计算同样表明,氯离子的中间单层覆盖会使烷基胺封端剂从纳米线的端部而非侧面被取代,从而促进各向异性生长。

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验