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在单层拓扑绝缘体中引入的超导性。

Gate-induced superconductivity in a monolayer topological insulator.

机构信息

Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, BC V6T 1Z4, Canada, and Department of Physics and Astronomy, University of British Columbia, Vancouver, BC V6T 1Z1, Canada.

Department of Physics, University of Washington, Seattle, WA 98195, USA.

出版信息

Science. 2018 Nov 23;362(6417):922-925. doi: 10.1126/science.aar4426. Epub 2018 Oct 25.

Abstract

The layered semimetal tungsten ditelluride (WTe) has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We found that intrinsic superconductivity can be induced in this monolayer 2D TI by mild electrostatic doping at temperatures below 1 kelvin. The 2D TI-superconductor transition can be driven by applying a small gate voltage. This discovery offers possibilities for gate-controlled devices combining superconductivity and nontrivial topological properties, and could provide a basis for quantum information schemes based on topological protection.

摘要

分层半导体二碲化钨(WTe)在减薄到单层时,最近被发现是一种二维拓扑绝缘体(2D TI),具有传导螺旋边缘通道。我们发现,在低于 1 开尔文的温度下,通过轻度静电掺杂,可以在这种单层 2D TI 中诱导出本征超导性。通过施加小的栅极电压可以驱动 2D TI-超导体转变。这一发现为结合超导性和非平凡拓扑性质的栅控器件提供了可能性,并可能为基于拓扑保护的量子信息方案提供基础。

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