Miller Derek R, Akbar Sheikh A, Morris Pat A
Department of Materials Science and Engineering, The Ohio State University, Columbus, OH 43212 USA.
Nanomicro Lett. 2017;9(3):33. doi: 10.1007/s40820-017-0136-6. Epub 2017 Feb 21.
Growth of single-crystal SnO nanowires using a fluorine-doped SnO (FTO) thin film as both the source and substrate is demonstrated for the first time at relatively low temperature (580 °C) which preserves the integrity of the underlying glass support and improves scalability to devices. Furthermore, a microwave hydrothermal process is shown to grow TiO nanorods on these nanowires to create a hierarchical nanoheterostructure that will lead to efficient photogenerated charge carrier separation and rapid transport of electrons to the substrate. This process simplifies nanowire growth by using commercially available and widely used FTO substrates without the need for an additional upstream Sn source and can be used as a high surface area host structure to many other hierarchical structures.
首次展示了在相对较低温度(580°C)下,使用氟掺杂的SnO(FTO)薄膜作为源和衬底来生长单晶SnO纳米线,该温度能保持底层玻璃支撑体的完整性并提高器件的可扩展性。此外,还表明微波水热法可在这些纳米线上生长TiO纳米棒,以形成分层纳米异质结构,这将导致光生电荷载流子的有效分离以及电子向衬底的快速传输。该过程通过使用市售且广泛使用的FTO衬底简化了纳米线的生长,无需额外的上游Sn源,并且可作为许多其他分层结构的高表面积主体结构。