Sun Xiaodong, Yuan Weizheng, Qiao Dayong, Sun Ming, Ren Sen
Key Laboratory of Micro/Nano Systems for Aerospace, Ministry of Education, Northwestern Polytechnical University, Xi'an 710072, China.
LeadMEMS Sci&Tech, Xi'an 710075, China.
Micromachines (Basel). 2016 Aug 24;7(9):148. doi: 10.3390/mi7090148.
This paper presents a micromachined resonant pressure sensor. The sensor is designed to optimize the sensitivity and reduce the cross-talk between the driving electrodes and sensing electrodes. The relationship between the sensitivity of the sensor and the main design parameters is analyzed both theoretically and numerically. The sensing and driving electrodes are optimized to get both high sensing capacitance and low cross-talk. This sensor is fabricated using a micromachining process based on a silicon-on-insulator (SOI) wafer. An open-loop measurement system and a closed-loop self-oscillation system is employed to measure the characteristics of the sensor. The experiment result shows that the sensor has a pressure sensitivity of about 29 Hz/kPa, a nonlinearity of 0.02%FS, a hysteresis error of 0.05%FS, and a repeatability error of 0.01%FS. The temperature coefficient is less than 2 Hz/°C in the range of -40 to 80 °C and the short-term stability of the sensor is better than 0.005%FS.
本文介绍了一种微机械谐振压力传感器。该传感器旨在优化灵敏度并减少驱动电极与传感电极之间的串扰。从理论和数值两方面分析了传感器灵敏度与主要设计参数之间的关系。对传感电极和驱动电极进行了优化,以获得高传感电容和低串扰。该传感器采用基于绝缘体上硅(SOI)晶圆的微加工工艺制造。采用开环测量系统和闭环自振荡系统来测量传感器的特性。实验结果表明,该传感器的压力灵敏度约为29 Hz/kPa,非线性为0.02%FS,滞后误差为0.05%FS,重复性误差为0.01%FS。在-40至80°C范围内,温度系数小于2 Hz/°C,传感器的短期稳定性优于0.005%FS。