Chen Da, Ren Wenwen, Song Shuren, Wang Jingjing, Liu Weihui, Wang Peng
State Key Laboratory of Mining Disaster Prevention and Control Co-founded by Shandong Province and the Ministry of Science and Technology, Shandong University of Science and Technology, Qingdao 266590, China.
College of Electronic, Communication and Physics, Shandong University of Science and Technology, Qingdao 266590, China.
Micromachines (Basel). 2016 Dec 14;7(12):231. doi: 10.3390/mi7120231.
A high Q factor film bulk acoustic resonator operating in thickness shear mode excited by a lateral field is described in this paper. The influence of electrode parameters on the resonator performance is studied by the finite element method. The results showed that three key electrode parameters, including the gap, length and width, played important roles in the optimization of the resonator performance. The highest Q factor of up to 643 was obtained when the parallel electrodes were designed to be 100 µm × 10 µm with the electrode gap of 10 µm. Based on the simulation results, the AlN-based film bulk acoustic resonator with a solidly mounted structure was fabricated. The testing results showed that the real device operated at the resonance frequency of 1.94 GHz with the Q factor of 405 in air, 216 in water and 102 in phosphate buffered saline solution.
本文描述了一种由横向场激发的厚度剪切模式下工作的高Q值薄膜体声波谐振器。采用有限元方法研究了电极参数对谐振器性能的影响。结果表明，包括间隙、长度和宽度在内的三个关键电极参数在谐振器性能优化中起着重要作用。当平行电极设计为100 µm×10 µm且电极间隙为10 µm时，获得了高达643的最高Q值。基于模拟结果，制备了具有固态安装结构的AlN基薄膜体声波谐振器。测试结果表明，该实际器件在空气中的谐振频率为1.94 GHz，Q值为405；在水中为216；在磷酸盐缓冲盐溶液中为102。
