用于基于AlGaN的深紫外发光二极管的p-AlGaN/n-AlGaN/p-AlGaN电流扩展层

On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes.

作者信息

Che Jiamang, Chu Chunshuang, Tian Kangkai, Kou Jianquan, Shao Hua, Zhang Yonghui, Bi Wengang, Zhang Zi-Hui

机构信息

Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.

Key Laboratory of Electronic Materials and Devices of Tianjin, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.

出版信息

Nanoscale Res Lett. 2018 Nov 8;13(1):355. doi: 10.1186/s11671-018-2776-y.

DOI:10.1186/s11671-018-2776-y

PMID:30411256

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6223402/

Abstract

In this report, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with different p-AlGaN/n-AlGaN/p-AlGaN (PNP-AlGaN) structured current spreading layers have been described and investigated. According to our results, the adopted PNP-AlGaN structure can induce an energy barrier in the hole injection layer that can modulate the lateral current distribution. We also find that the current spreading effect can be strongly affected by the thickness, the doping concentration, the PNP loop, and the AlN composition for the inserted n-AlGaN layer. Therefore, if the PNP-AlGaN structure is properly designed, the forward voltage, the external quantum efficiency, the optical power, and the wall-plug efficiency for the proposed DUV LEDs can be significantly improved as compared with the conventional DUV LED without the PNP-AlGaN structure.

摘要

在本报告中，对具有不同p-AlGaN/n-AlGaN/p-AlGaN（PNP-AlGaN）结构电流扩展层的基于AlGaN的深紫外发光二极管（DUV LED）进行了描述和研究。根据我们的结果，所采用的PNP-AlGaN结构可在空穴注入层中诱导一个能垒，该能垒可调节横向电流分布。我们还发现，电流扩展效应会受到插入的n-AlGaN层的厚度、掺杂浓度、PNP回路和AlN组成的强烈影响。因此，如果对PNP-AlGaN结构进行适当设计，与没有PNP-AlGaN结构的传统DUV LED相比，所提出的DUV LED的正向电压、外量子效率、光功率和壁插效率可得到显著提高。