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用于基于AlGaN的深紫外发光二极管的p-AlGaN/n-AlGaN/p-AlGaN电流扩展层

On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes.

作者信息

Che Jiamang, Chu Chunshuang, Tian Kangkai, Kou Jianquan, Shao Hua, Zhang Yonghui, Bi Wengang, Zhang Zi-Hui

机构信息

Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.

Key Laboratory of Electronic Materials and Devices of Tianjin, 5340 Xiping Road, Beichen District, Tianjin, 300401, People's Republic of China.

出版信息

Nanoscale Res Lett. 2018 Nov 8;13(1):355. doi: 10.1186/s11671-018-2776-y.

DOI:10.1186/s11671-018-2776-y
PMID:30411256
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6223402/
Abstract

In this report, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with different p-AlGaN/n-AlGaN/p-AlGaN (PNP-AlGaN) structured current spreading layers have been described and investigated. According to our results, the adopted PNP-AlGaN structure can induce an energy barrier in the hole injection layer that can modulate the lateral current distribution. We also find that the current spreading effect can be strongly affected by the thickness, the doping concentration, the PNP loop, and the AlN composition for the inserted n-AlGaN layer. Therefore, if the PNP-AlGaN structure is properly designed, the forward voltage, the external quantum efficiency, the optical power, and the wall-plug efficiency for the proposed DUV LEDs can be significantly improved as compared with the conventional DUV LED without the PNP-AlGaN structure.

摘要

在本报告中，对具有不同p-AlGaN/n-AlGaN/p-AlGaN（PNP-AlGaN）结构电流扩展层的基于AlGaN的深紫外发光二极管（DUV LED）进行了描述和研究。根据我们的结果，所采用的PNP-AlGaN结构可在空穴注入层中诱导一个能垒，该能垒可调节横向电流分布。我们还发现，电流扩展效应会受到插入的n-AlGaN层的厚度、掺杂浓度、PNP回路和AlN组成的强烈影响。因此，如果对PNP-AlGaN结构进行适当设计，与没有PNP-AlGaN结构的传统DUV LED相比，所提出的DUV LED的正向电压、外量子效率、光功率和壁插效率可得到显著提高。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a85/6223402/6508da52ff52/11671_2018_2776_Fig17_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a85/6223402/6508da52ff52/11671_2018_2776_Fig17_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a85/6223402/c4e89884b6bb/11671_2018_2776_Fig1_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a85/6223402/b46004c69f7e/11671_2018_2776_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a85/6223402/10a42d72311e/11671_2018_2776_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a85/6223402/fe1519219b39/11671_2018_2776_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a85/6223402/063bc87811b9/11671_2018_2776_Fig10_HTML.jpg
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本文引用的文献

1
Water recycling with PV-powered UV-LED disinfection.采用光伏供电的紫外线发光二极管进行水的循环利用。
Renew Energy. 2006 Sep;31(11):1657-1664. doi: 10.1016/j.renene.2005.08.034. Epub 2006 Jan 24.
2
Use of a patterned current blocking layer to enhance the light output power of InGaN-based light-emitting diodes.使用图案化电流阻挡层提高基于氮化铟镓的发光二极管的光输出功率。
Opt Express. 2017 Jul 24;25(15):17556-17561. doi: 10.1364/OE.25.017556.
3
On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes.
Nanoscale Res Lett. 2020 Aug 6;15(1):160. doi: 10.1186/s11671-020-03372-3.
4
Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field.纳米尺度应变场中位错对AlN折射率的影响。
Nanoscale Res Lett. 2019 May 30;14(1):184. doi: 10.1186/s11671-019-3018-7.
5
Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes.锗掺杂垂直氮化镓肖特基势垒二极管的恢复性能
Nanoscale Res Lett. 2019 Jan 31;14(1):40. doi: 10.1186/s11671-019-2872-7.
基于III族氮化物的深紫外发光二极管的电场存储层
Opt Express. 2017 Jul 10;25(14):16550-16559. doi: 10.1364/OE.25.016550.
4
Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.具有p-GaN/n-GaN/p-GaN/n-GaN/p-GaN电流扩展层的改进型氮化铟镓/氮化镓发光二极管。
Opt Express. 2013 Feb 25;21(4):4958-69. doi: 10.1364/OE.21.004958.
5
Application of GaN-based ultraviolet-C light emitting diodes--UV LEDs--for water disinfection.GaN 基深紫外发光二极管（UV LEDs）在水消毒中的应用。
Water Res. 2011 Jan;45(3):1481-9. doi: 10.1016/j.watres.2010.11.015. Epub 2010 Nov 16.
6
Ultraviolet light-emitting diodes in water disinfection.用于水消毒的紫外线发光二极管
Environ Sci Pollut Res Int. 2009 Jun;16(4):439-42. doi: 10.1007/s11356-009-0103-y. Epub 2009 Feb 11.
7
Development of a new water sterilization device with a 365 nm UV-LED.一种采用365纳米紫外线发光二极管的新型水消毒装置的研发。
Med Biol Eng Comput. 2007 Dec;45(12):1237-41. doi: 10.1007/s11517-007-0263-1. Epub 2007 Nov 3.