锗掺杂垂直氮化镓肖特基势垒二极管的恢复性能

Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes.

作者信息

Gu Hong, Tian Feifei, Zhang Chunyu, Xu Ke, Wang Jiale, Chen Yong, Deng Xuanhua, Liu Xinke

机构信息

College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen Key Laboratory of Special Functional Materials, Chinese Engineering and Research Institute of Microelectronics, Shenzhen University, Shenzhen, 518060, People's Republic of China.

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China.

出版信息

Nanoscale Res Lett. 2019 Jan 31;14(1):40. doi: 10.1186/s11671-019-2872-7.

DOI:10.1186/s11671-019-2872-7

PMID:30706287

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6355890/

Abstract

Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the dislocation density was determined to be ~ 1.3 × 10 cm. With the electrical performance measurements conducted, the SBDs show a low turn-on voltage V (0.70~~0.78 V) and high current I/I ratio (9.9 × 10~~1.3 × 10). The reverse recovery characteristics were investigated. The reverse recovery time was obtained to be 15.8, 16.2, 18.1, 21.22, and 24.5 ns for the 100-, 200-, 300-, 400-, and 500-μm-diameter SBDs, respectively. Meanwhile, the reverse recovery time and reverse recovery charge both show a significant positive correlation with the electrode area.

摘要

垂直氮化镓肖特基势垒二极管（SBD）是在掺锗的自支撑氮化镓衬底上制备的。通过阴极发光测量对SBD的晶体质量进行了表征，确定位错密度约为1.3×10¹⁰cm⁻²。通过电学性能测量，SBD显示出低开启电压V（0.70~~0.78V）和高电流I/I比（9.9×10⁷~~1.3×10⁸）。研究了反向恢复特性。对于直径为100、200、300、400和500μm的SBD，反向恢复时间分别为15.8、16.2、18.1、21.22和24.5ns。同时，反向恢复时间和反向恢复电荷均与电极面积呈显著正相关。