Maruyama Mina, Okada Susumu
University of Tsukuba, Graduate School of Pure and Applied Sciences, Tsukuba, 305-8571, Japan.
Sci Rep. 2018 Nov 9;8(1):16657. doi: 10.1038/s41598-018-34874-x.
We studied the energetics and electronic structures of hexagonal boron nitrogen (h-BN) nanoflakes with hydrogenated edges and triangular shapes with respect to the edge atom species. Our calculations clarified that the hydrogenated h-BN nanoflakes with a triangular shape prefer the N edges rather than B edges irrespective of the flake size. The electronic structure of hydrogenated h-BN nanoflakes depends on the edge atom species and their flake size. The energy gap between the lowest unoccupied (LU) and the highest occupied (HO) states of the nanoflakes with N edges is narrower than that of the nanoflakes with B edges and the band gap of h-BN. The nanoflakes possess peculiar non-bonding states around their HO and LU states for the N and B edges, respectively, which cause spin polarization under hole or electron doping, depending on the edge atom species.
我们研究了具有氢化边缘和三角形形状的六方氮化硼(h-BN)纳米片在边缘原子种类方面的能量学和电子结构。我们的计算表明,无论薄片尺寸如何,具有三角形形状的氢化h-BN纳米片更喜欢N边缘而非B边缘。氢化h-BN纳米片的电子结构取决于边缘原子种类及其薄片尺寸。具有N边缘的纳米片的最低未占据(LU)态和最高占据(HO)态之间的能隙比具有B边缘的纳米片和h-BN的带隙更窄。纳米片分别在其HO和LU态周围具有特殊的非键合态,对于N和B边缘而言,根据边缘原子种类的不同,在空穴或电子掺杂下会导致自旋极化。