Wang Dapeng, Furuta Mamoru
Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, China.
School of Environmental Science and Engineering, Kochi University of Technology, Kami, Kochi 782-8502, Japan.
Beilstein J Nanotechnol. 2018 Sep 26;9:2573-2580. doi: 10.3762/bjnano.9.239. eCollection 2018.
The photoleakage current and the negative bias and illumination stress (NBIS)-induced instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with various active layer thicknesses ( ) were investigated. The photoleakage current was found to gradually increase in a-IGZO TFTs irrespective of the when the photon energy of visible light irradiation exceeded ≈2.7 eV. Furthermore, the influence of the on NBIS-induced instability in a-IGZO TFTs was explored by the combination of current-voltage measurements in double-sweeping mode and capacitance-voltage measurements. The NBIS-induced hysteresis was quantitatively analyzed using a positive gate pulse mode. When the was close to the Debye length, the trapped electrons at the etch-stopper/IGZO interface, the trapped holes at the IGZO/gate insulator interface, and the generation of donor-like states in an a-IGZO layer were especially prominent during NBIS.
研究了具有不同有源层厚度（ ）的非晶铟镓锌氧化物薄膜晶体管（a-IGZO TFTs）中的光泄漏电流以及负偏压和光照应力（NBIS）诱导的不稳定性。当可见光照射的光子能量超过≈2.7 eV时，发现a-IGZO TFTs中的光泄漏电流会逐渐增加，与 无关。此外，通过双扫描 模式下的电流-电压测量和电容-电压测量相结合的方式，探讨了 对a-IGZO TFTs中NBIS诱导的不稳定性的影响。使用正栅极脉冲模式对NBIS诱导的滞后现象进行了定量分析。当 接近德拜长度时，在NBIS期间，蚀刻停止层/IGZO界面处的俘获电子、IGZO/栅极绝缘体界面处的俘获空穴以及a-IGZO层中类施主态的产生尤为突出。
