Avis Christophe, Hwang Hye Rim, Jang Jin
Kyung Hee University , Advanced Display Research Center and Department of Information Display, Dondaemun-gu, Seoul 130-701, Korea.
ACS Appl Mater Interfaces. 2014 Jul 23;6(14):10941-5. doi: 10.1021/am501153w. Epub 2014 Jun 30.
We report the fabrication of high field-effect mobility of ∼110 cm(2)/(V s) for inkjet printed indium-zinc-tin oxide (IZTO) thin film transistors (TFTs). It is found that the morphology of IZTO material deposited by inkjet printing depends strongly on its thickness. When the thickness is 35 nm, IZTO is an homogeneous amorphous material and the TFT exhibits mobility over 100 cm(2)/(V s) and on/off current ratio of >10(6). However, when the thickness is 85 nm, IZTO has a two layer structure of homogeneous and heterogeneous materials and thus the TFT exhibited a mobility of ∼20 cm(2)/(V s). When the thickness is 800 nm, the morphology is porous and heterogeneous and thus the on/off current ratio is less than 1 × 10(3) and its mobility is ∼14 cm(2)/(V s). It is concluded therefore that homogeneous amorphous IZTO TFT on Al2O3 gate insulator can show high mobility, which can be achieved by thin layer formation by inkjet printing.
我们报道了通过喷墨打印制备的铟锌锡氧化物（IZTO）薄膜晶体管（TFT）具有约110 cm²/(V·s)的高场效应迁移率。研究发现，通过喷墨打印沉积的IZTO材料的形貌强烈依赖于其厚度。当厚度为35 nm时，IZTO是一种均匀的非晶材料，该TFT表现出超过100 cm²/(V·s)的迁移率和大于10⁶的开/关电流比。然而，当厚度为85 nm时，IZTO具有均匀和非均匀材料的双层结构，因此该TFT的迁移率约为20 cm²/(V·s)。当厚度为800 nm时，形貌为多孔且非均匀的，因此开/关电流比小于1×10³，其迁移率约为14 cm²/(V·s)。因此得出结论，在Al₂O₃栅极绝缘体上的均匀非晶IZTO TFT可以表现出高迁移率，这可以通过喷墨打印形成薄层来实现。
