氮高压退火对铟镓锌氧化物薄膜晶体管的研究。

Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors.

作者信息

Yoon Seokhyun, Tak Young Jun, Yoon Doo Hyun, Choi Uy Hyun, Park Jin-Seong, Ahn Byung Du, Kim Hyun Jae

机构信息

School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea.

出版信息

ACS Appl Mater Interfaces. 2014 Aug 27;6(16):13496-501. doi: 10.1021/am502571w. Epub 2014 Aug 8.

DOI:10.1021/am502571w

PMID:25078328

Abstract

We studied the effects of high-pressure annealing (HPA) on InGaZnO (IGZO) thin-film transistors (TFTs). HPA was proceeded after TFT fabrication as a post process to improve electrical performance and stability. We used N2 as the pressurized gas. The applied pressures were 1 and 3 MPa at 200 °C. For N2 HPA under 3 MPa at 200 °C, field-effect mobility and the threshold voltage shift under a positive bias temperature stress were improved by 3.31 to 8.82 cm(2)/(V s) and 8.90 to 4.50 V, respectively. The improved electrical performance and stability were due to structural relaxation by HPA, which leads to increased carrier concentration and decreased oxygen vacancy.

摘要

我们研究了高压退火（HPA）对铟镓锌氧化物（IGZO）薄膜晶体管（TFT）的影响。HPA在TFT制造之后作为后处理步骤进行，以改善电学性能和稳定性。我们使用氮气作为加压气体。在200°C下施加的压力为1和3兆帕。对于在200°C下3兆帕的氮气HPA，场效应迁移率和正偏压温度应力下的阈值电压偏移分别提高了3.31至8.82厘米²/（伏·秒）和8.90至4.50伏。电学性能和稳定性的改善归因于HPA引起的结构弛豫，这导致载流子浓度增加和氧空位减少。