Zhang Jiawei, Yang Jia, Li Yunpeng, Wilson Joshua, Ma Xiaochen, Xin Qian, Song Aimin
School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, UK.
School of Physics, Shandong University, Jinan 250100, China.
Materials (Basel). 2017 Mar 21;10(3):319. doi: 10.3390/ma10030319.
Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm²/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm²/(V∙s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics.
氧化物半导体被认为是用于大面积和/或柔性电子器件的有前途的材料。在这项工作中，展示了一种基于n型铟镓锌氧化物（IGZO）和p型一氧化锡（SnO）的环形振荡器。IGZO薄膜晶体管（TFT）的线性迁移率为11.9 cm²/(V∙s)，阈值电压为12.2 V。SnO TFT的迁移率为0.51 cm²/(V∙s)，阈值电压为20.1 V，适合与IGZO TFT一起用于形成互补电路。在40 V的电源电压下，互补反相器显示出全输出电压摆幅，并且两个TFT具有相同沟道长度/沟道宽度比时增益为24。基于IGZO和SnO的三级环形振荡器能够在2.63 kHz下工作，并且在40 V的电源电压下峰峰值振荡幅度达到36.1 V。经过进一步优化工作电压后，基于氧化物的互补电路可能在实际的大面积柔性电子器件中有广泛应用。
