Wang Qi, Zhang Pingping, Zhuo Qiqi, Lv Xiaoxin, Wang Jiwei, Sun Xuhui
Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano & Soft Materials, Soochow University, Suzhou, 215123 Jiangsu People's Republic of China.
Nanomicro Lett. 2015;7(4):368-373. doi: 10.1007/s40820-015-0052-6. Epub 2015 Jul 16.
Direct synthesis of high-quality doped graphene on dielectric substrates without transfer is highly desired for simplified device processing in electronic applications. However, graphene synthesis directly on substrates suitable for device applications, though highly demanded, remains unattainable and challenging. Here, a simple and transfer-free synthesis of high-quality doped graphene on the dielectric substrate has been developed using a thin Cu layer as the top catalyst and polycyclic aromatic hydrocarbons as both carbon precursors and doping sources. N-doped and N, F-co-doped graphene have been achieved using TPB and FCuPc as solid carbon sources, respectively. The growth conditions were systematically optimized and the as-grown doped graphene were well characterized. The growth strategy provides a controllable transfer-free route for high-quality doped graphene synthesis, which will facilitate the practical applications of graphene.
对于电子应用中的简化器件加工而言，非常需要在介电衬底上直接合成高质量的掺杂石墨烯而无需转移。然而，直接在适用于器件应用的衬底上合成石墨烯，尽管需求很高，但仍然无法实现且具有挑战性。在此，已开发出一种简单且无需转移的方法，在介电衬底上合成高质量的掺杂石墨烯，该方法使用薄铜层作为顶部催化剂，并使用多环芳烃作为碳前驱体和掺杂源。分别使用TPB和FCuPc作为固体碳源实现了氮掺杂和氮、氟共掺杂的石墨烯。系统地优化了生长条件，并对生长出的掺杂石墨烯进行了充分表征。该生长策略为高质量掺杂石墨烯的合成提供了一条可控的无需转移的途径，这将促进石墨烯的实际应用。
