Aas Shahnaz, Bulutay Ceyhun
Opt Express. 2018 Oct 29;26(22):28672-28681. doi: 10.1364/OE.26.028672.
Within a two-band k · p method we analyze different types of strain for the K valley optical characteristics of a freestanding monolayer MoS, MoSe, WS and WSe. We predict that circular polarization selectivity for energies above the direct transition onset deteriorates/improves by tensile/compressive strain. Wide range of available strained-sample photoluminescence data can be reasonably reproduced by this simple bandstructure combined with accounting for excitons at a variational level. According to this model strain impacts optoelectronic properties through its hydrostatic component, whereas the shear strain only causes a rigid wavevector shift of the valley. Furthermore, under the stress loading of flexible substrates the presence of Poisson's effect or the lack of it are examined individually for the reported measurements.
在双带k·p方法中,我们分析了独立单层MoS、MoSe、WS和WSe的K谷光学特性的不同类型应变。我们预测,对于高于直接跃迁起始能量的情况,圆偏振选择性会因拉伸/压缩应变而恶化/改善。通过这种简单的能带结构,并在变分水平上考虑激子,可以合理地再现大范围可用的应变样品光致发光数据。根据该模型,应变通过其静水压力分量影响光电特性,而剪切应变仅导致谷的刚性波矢位移。此外,在柔性衬底的应力加载下,针对所报道的测量分别研究了泊松效应的存在与否。