Yan Yalan, Ding Shuang, Wu Xiaonan, Zhu Jian, Feng Dengman, Yang Xiaodong, Li Fangfei
Institute for Interdisciplinary Biomass Functional Materials Studies, Jilin Engineering Normal University No. 3050 Kaixuan Road Changchun 130052 People's Republic of China
Department of Chemical Engineering, Chengde Petroleum College Chengde 067000 People's Republic of China
RSC Adv. 2020 Oct 27;10(65):39455-39467. doi: 10.1039/d0ra07288e.
Transition-metal dichalcogenides (TMDs) have become one of the recent frontiers and focuses in two-dimensional (2D) materials fields thanks to their superior electronic, optical, and photoelectric properties. Triggered by the growing demand for developing nano-electronic devices, strain engineering of ultrathin TMDs has become a hot topic in the scientific community. In recent years, both theoretical and experimental research on the strain engineering of ultrathin TMDs have suggested new opportunities to achieve high-performance ultrathin TMDs based devices. However, recent reviews mainly focus on the experimental progress and the related theoretical research has long been ignored. In this review, we first outline the currently employed approaches for introducing strain in ultrathin TMDs, both their characteristics and advantages are explained in detail. Subsequently, the recent research progress in the modification of lattice and electronic structure, and physical properties of ultrathin TMDs under strain are systematically reviewed from both experimental and theoretical perspectives. Despite much work being done in this filed, reducing the distance of experimental progress from the theoretical prediction remains a great challenge in realizing wide applications of ultrathin TMDs in nano-electronic devices.
过渡金属二硫属化物（TMDs）凭借其卓越的电子、光学和光电特性，已成为二维（2D）材料领域近期的前沿和研究热点之一。受开发纳米电子器件不断增长的需求推动，超薄TMDs的应变工程已成为科学界的一个热门话题。近年来，关于超薄TMDs应变工程的理论和实验研究都为实现基于高性能超薄TMDs的器件带来了新机遇。然而，近期的综述主要集中在实验进展上，相关的理论研究长期被忽视。在本综述中，我们首先概述了目前在超薄TMDs中引入应变所采用的方法，并详细解释了它们的特点和优势。随后，从实验和理论两个角度系统地综述了应变作用下超薄TMDs的晶格和电子结构改性以及物理性质的最新研究进展。尽管在该领域已经开展了大量工作，但缩小实验进展与理论预测之间的差距，仍然是实现超薄TMDs在纳米电子器件中广泛应用的巨大挑战。
