三堆叠纳米线场效应晶体管中沟槽源极/漏极结构的自热效应分析

Analysis on Self Heating Effect for a Trenched Source/Drain Structure in Triple-Stacked Nanowire FET.

作者信息

Kim Hyunsuk, Son Do-Kyun, Myeong Ilho, Kang Myounggon, Shin Hyungcheol

机构信息

Inter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 151-747, South Korea.

Department of Electronics Engineering, Korea National University of Transportation, Chungju, 380-702, South Korea.

出版信息

J Nanosci Nanotechnol. 2019 Apr 1;19(4):2281-2284. doi: 10.1166/jnn.2019.15811.

DOI:10.1166/jnn.2019.15811

PMID:30486982

Abstract

Accurate evaluations of self-heating effects (SHEs) in highly down-scaled devices have become essential for improved performance and reliability of such devices. In this paper, SHEs in a triplestacked nanowire FETs (NWFETs) with trenched source drain structures, a structure which may be capable of obtaining a high on-current () in the 5 nm node, were analyzed through TCAD simulations. It was confirmed that trench methods for triple-stacked devices can effectively boost if disregarding SHEs. However, because SHEs generated under high prevent any increase of , the trench steps should be adjusted appropriately considering the balance between the contact resistance and the SHEs. In order to obtain a proper trench depth, several steps were compared through a simulation. To support the results, the thermal resistance () was used in the comparison.

摘要

对于高度缩小型器件而言，准确评估自热效应（SHEs）对于提高此类器件的性能和可靠性至关重要。在本文中，通过TCAD模拟分析了具有沟槽源漏结构的三层堆叠纳米线场效应晶体管（NWFETs）中的自热效应，这种结构在5纳米节点可能能够获得高导通电流（）。结果证实，如果不考虑自热效应，三层堆叠器件的沟槽方法可以有效地提高。然而，由于在高电流下产生的自热效应会阻止导通电流的任何增加，因此应适当调整沟槽步骤，同时考虑接触电阻和自热效应之间的平衡。为了获得合适的沟槽深度，通过模拟比较了几个步骤。为了支持结果，在比较中使用了热阻（）。