Corbett Simon, Gautam D, Lal Swatchith, Yu Kenny, Balla Naveen, Cunningham Graeme, Razeeb Kafil M, Enright Ryan, McCloskey David
School of Physics, Trinity College, Dublin 2 D02 PN40, Ireland.
Tyndall National Institute, University College Cork, Dyke Parade, Lee Maltings, Cork T12 R5CP, Ireland.
ACS Appl Mater Interfaces. 2021 Jan 13;13(1):1773-1782. doi: 10.1021/acsami.0c16614. Epub 2021 Jan 4.
Thin-film thermoelectric coolers are emerging as a viable option for the on-chip temperature management of electronic and photonic integrated circuits. In this work, we demonstrate the record heat flux handling capability of electrodeposited BiTe films of 720(±60) W cm at room temperature, achieved by careful control of the contact interfaces to reduce contact resistance. The characteristic parameters of a single leg thin-film devices were measured in situ, giving a Seebeck coefficient of = -121(±6) μV K, thermal conductivity of κ = 0.85(±0.08) W m K, electrical conductivity of σ = 5.2(±0.32) × 10 S m, and electrical contact resistivity of ∼10 Ω m. These thermoelectric parameters lead to a material ZT = 0.26(±0.04), which, for our device structure, allowed a net cooling of Δ = 4.4(±0.12) K. A response time of τ = 20 μs was measured experimentally. This work shows that with the correct treatment of contact interfaces, electrodeposited thin-film thermoelectrics can compete with more complicated and expensive technologies such as metal organic chemical vapor deposition (MOCVD) multilayers.
薄膜热电冷却器正成为电子和光子集成电路片上温度管理的一种可行选择。在这项工作中，我们展示了通过精心控制接触界面以降低接触电阻，在室温下电沉积BiTe薄膜实现的创纪录热流处理能力，为720（±60）W/cm。原位测量了单腿薄膜器件的特征参数，塞贝克系数为 = -121（±6）μV/K，热导率为κ = 0.85（±0.08）W/（m·K），电导率为σ = 5.2（±0.32）×10 S/m，以及电接触电阻率约为10Ω·m。这些热电参数导致材料ZT = 0.26（±0.04），对于我们的器件结构，实现了4.4（±0.12）K的净冷却。实验测得响应时间τ = 20μs。这项工作表明，通过对接触界面进行正确处理，电沉积薄膜热电材料可以与诸如金属有机化学气相沉积（MOCVD）多层膜等更复杂且昂贵的技术相竞争。
