Zhang Pengzhan, Zhang Leng, Ge Xuefeng, Wang Sake
College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China.
Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China.
Materials (Basel). 2018 Dec 8;11(12):2494. doi: 10.3390/ma11122494.
In this work, we systematically investigated the bonding defects that induced high photoluminescence internal quantum efficiencies (PL IQEs) and very fast radiative recombination processes in amorphous silicon oxynitride (a-SiNO) systems. The luminescent N‒Si‒O bonding-related defect states were checked for the XPS, EPR, and temperature-dependent steady-state PL (TD-SSPL) properties. The PL IQEs were calculated from PL quantum yields through the principle of planar geometry optics, and then confirmed by the TD-SSPL properties. The radiative recombination rates [(R)] were determined by combining the PL IQE values and ns-PL lifetimes obtained from time-resolved PL measurements. Both the PL IQE, exceeding 72%, and the fast (R) (~10⁸ s) are proportional to the concentration of defects, which can be explained by N‒Si‒O bonding states related to the quasi-three-level model, suggesting the possible realization of stimulated light emission in a-SiNO systems.
在这项工作中，我们系统地研究了在氮氧化非晶硅（a-SiNO）系统中诱导高光致发光内量子效率（PL IQEs）和非常快速的辐射复合过程的键合缺陷。通过X射线光电子能谱（XPS）、电子顺磁共振（EPR）和温度相关稳态光致发光（TD-SSPL）特性，对与发光N‒Si‒O键合相关的缺陷态进行了检测。根据平面几何光学原理，从光致发光量子产率计算光致发光内量子效率，然后通过TD-SSPL特性进行确认。通过结合光致发光内量子效率值和从时间分辨光致发光测量中获得的纳秒级光致发光寿命，确定辐射复合率[（R）]。超过72%的光致发光内量子效率和快速的（R）（~10⁸ s）都与缺陷浓度成正比，这可以用与准三能级模型相关的N‒Si‒O键合态来解释，表明在a-SiNO系统中可能实现受激发光发射。
