Zhang Pengzhan, Zhang Leng, Lyu Fei, Wang Danbei, Zhang Ling, Wu Kongpin, Wang Sake, Tang Chunmei
College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, China.
Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing 210093, China.
Nanomaterials (Basel). 2023 Apr 3;13(7):1269. doi: 10.3390/nano13071269.
In recent years, researchers have placed great importance on the use of silicon (Si)-related materials as efficient light sources for the purpose of realizing Si-based monolithic optoelectronic integration. Previous works were mostly focused on Si nanostructured materials, and, so far, exciting results from Si-based compounds are still lacking. In this paper, we have systematically demonstrated the high photoluminescence external quantum efficiency (PL EQE) and internal quantum efficiency (PL IQE) of amorphous silicon oxynitride (a-SiNO) systems. Within an integration sphere, we directly measured the PL EQE values of a-SiNO, which ranged from approximately 2% to 10% in the visible range at room temperature. Then, we calculated the related PL IQE through temperature-dependent PL measurements. The obtained PL IQE values (~84% at 480 nm emission peak wavelength) were very high compared with those of reported Si-based luminescent thin films. We also calculated the temperature-dependent PL EQE values of a-SiNO systems, and discussed the related PL mechanisms.
近年来，为了实现基于硅的单片光电集成，研究人员高度重视将硅（Si）相关材料用作高效光源。先前的工作大多集中在硅纳米结构材料上，而到目前为止，基于硅的化合物仍缺乏令人兴奋的成果。在本文中，我们系统地展示了氮氧化非晶硅（a-SiNO）系统的高光致发光外量子效率（PL EQE）和内量子效率（PL IQE）。在积分球内，我们直接测量了a-SiNO的PL EQE值，在室温下可见光范围内其值约为2%至10%。然后，我们通过温度相关的光致发光测量计算了相关的PL IQE。与报道的基于硅的发光薄膜相比，获得的PL IQE值（在480 nm发射峰值波长处约为84%）非常高。我们还计算了a-SiNO系统的温度相关PL EQE值，并讨论了相关的光致发光机制。
