Department of Chemical and Biomolecular Engineering (BK-21 Plus), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea.
Korea Advanced Institute of Science and Technology (KAIST) Institute for NanoCentury, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea.
Sensors (Basel). 2018 Dec 15;18(12):4438. doi: 10.3390/s18124438.
Recently, high-resolution patterned metal oxide semiconductors (MOS) have gained considerable attention for enhanced gas sensing performance due to their polycrystalline nature, ultrasmall grain size (~5 nm), patternable properties, and high surface-to-volume ratio. Herein, we significantly enhanced the sensing performance of that patterned MOS by galvanic replacement, which allows for selective functionalization on ultrathin Cu₂O nanopatterns. Based on the reduction potential energy difference between the base channel material (Cu₂O) and the decorated metal ion (Pt), Pt could be selectively and precisely decorated onto the desired area of the Cu₂O nanochannel array. Overall, the Pt-decorated Cu₂O exhibited 11-fold higher NO₂ (100 ppm) sensing sensitivity as compared to the non-decorated sensing channel, the while the channel device with excessive Pt doping showed complete loss of sensing properties.
最近，由于具有多晶态、超小晶粒尺寸（~5nm）、可图案化特性和高表面积与体积比，高分辨率图案化金属氧化物半导体（MOS）在增强气体传感性能方面引起了相当大的关注。在此，我们通过电置换显著增强了图案化 MOS 的传感性能，该方法允许在超薄 Cu2O 纳米图案上进行选择性功能化。基于基底通道材料（Cu2O）和修饰金属离子（Pt）之间的还原势能差，可以选择性和精确地将 Pt 修饰到 Cu2O 纳米通道阵列的所需区域上。总体而言，与未经修饰的传感通道相比，Pt 修饰的 Cu2O 对 NO2（100ppm）的传感灵敏度提高了 11 倍，而 Pt 掺杂过多的通道器件则完全丧失了传感性能。
