State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University , Shanghai 200433, China.
Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.
ACS Appl Mater Interfaces. 2017 Nov 8;9(44):38662-38669. doi: 10.1021/acsami.7b12262. Epub 2017 Oct 25.
The AlON film with homogeneous nitrogen-doping profile was grown by plasma-enhanced atomic layer deposition (PEALD) at low temperature. In this work, the precursors of the NH and the O were simultaneously introduced into the chamber during the PEALD growth at a relatively low temperature of 185 °C. It is found that the composition of the obtained film quickly changes from AlN to AlO when a small amount of O is added. Thus, the NH:O ratio should be maintained at a relatively high level (>85%) for realizing the AlON growth. Benefited from the growth method, the nitrogen can be doped evenly in the entire film. Moreover, the AlON films exhibit a lower surface roughness than the AlN as well as the AlO ones. The Al 2p and N 1s X-ray photoelectron spectra show that the AlON film is composed of Al-N, Al-O, and N-Al-O bonds. Moreover, a three-layer construction of the AlON film is proposed through the Si 2p spectra analysis and reconfirmed by the transmission electron microscopy characterization. At last, the electrical and optical tests indicate that the AlON films prepared in this work can be employed as the gate dielectric in transistor application as well as the antireflection layer in photovoltaic application.
采用等离子体增强原子层沉积（PEALD）在低温下生长具有均匀氮掺杂分布的 AlON 薄膜。在这项工作中，前驱体 NH 和 O 在相对较低的 185°C 温度下同时引入腔室，在生长过程中，当少量 O 被引入时，所获得的薄膜的组成会迅速从 AlN 转变为 AlO。因此，为了实现 AlON 的生长，NH:O 的比值应保持在相对较高的水平（>85%）。得益于这种生长方法，氮可以均匀地掺杂在整个薄膜中。此外，与 AlN 和 AlO 相比，AlON 薄膜具有更低的表面粗糙度。Al 2p 和 N 1s X 射线光电子能谱表明，AlON 薄膜由 Al-N、Al-O 和 N-Al-O 键组成。此外，通过 Si 2p 谱分析提出了 AlON 薄膜的三层结构，并通过透射电子显微镜表征进行了重新确认。最后，电学和光学测试表明，本工作中制备的 AlON 薄膜可用作晶体管应用中的栅介质以及光伏应用中的抗反射层。
