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单晶硅直接与化学辅助皮秒激光微钻削的性能评估与比较

Performance Evaluation and Comparison between Direct and Chemical-Assisted Picosecond Laser Micro-Trepanning of Single Crystalline Silicon.

作者信息

Zhu Hao, Zhang Zhaoyang, Xu Kun, Xu Jinlei, Zhu Shuaijie, Wang Anbin, Qi Huan

机构信息

School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, China.

Key Laboratory of Special Purpose Equipment and Advanced Processing Technology, Ministry of Education & Zhejiang Province, Zhejiang University of Technology, Hangzhou 310014, China.

出版信息

Materials (Basel). 2018 Dec 23;12(1):41. doi: 10.3390/ma12010041.

DOI:10.3390/ma12010041
PMID:30583577
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6337372/
Abstract

The fabrication of micro-holes in silicon substrates that have a proper taper, higher depth-to-diameter ratio, and better surface quality has been attracting intense interest for a long time due to its importance in the semiconductor and MEMS (Micro-Electro-Mechanical System) industry. In this paper, an experimental investigation of the machining performance of the direct and chemical-assisted picosecond laser trepanning of single crystalline silicon is conducted, with a view to assess the two machining methods. The relevant parameters affecting the trepanning process are considered, employing the orthogonal experimental design scheme. It is found that the direct laser trepanning results are associated with evident thermal defects, while the chemical-assisted method is capable of machining micro-holes with negligible thermal damage. Range analysis is then carried out, and the effects of the processing parameters on the hole characteristics are amply discussed to obtain the recommended parameters. Finally, the material removal mechanisms that are involved in the two machining methods are adequately analyzed. For the chemical-assisted trepanning case, the enhanced material removal rate may be attributed to the serious mechanical effects caused by the liquid-confined plasma and cavitation bubbles, and the chemical etching effect provided by NaOH solution.

摘要

由于在半导体和微机电系统（MEMS）行业中的重要性，在具有适当锥度、更高深径比和更好表面质量的硅衬底上制造微孔长期以来一直备受关注。本文对单晶硅直接和化学辅助皮秒激光环切加工性能进行了实验研究，以评估这两种加工方法。采用正交实验设计方案，考虑了影响环切过程的相关参数。结果发现，直接激光环切会产生明显的热缺陷，而化学辅助方法能够加工出热损伤可忽略不计的微孔。然后进行了极差分析，并充分讨论了加工参数对孔特征的影响，以获得推荐参数。最后，对两种加工方法所涉及的材料去除机制进行了充分分析。对于化学辅助环切情况，材料去除率的提高可能归因于液体限制等离子体和空化气泡引起的严重机械效应以及NaOH溶液提供的化学蚀刻效应。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/a640011e62eb/materials-12-00041-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/6896c55138d2/materials-12-00041-g001.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/b749e41de03a/materials-12-00041-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/c374f7859741/materials-12-00041-g004.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/b5a628e1e215/materials-12-00041-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/3add8c9863d9/materials-12-00041-g007a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/a4485d0f9a34/materials-12-00041-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/2d0a7174b449/materials-12-00041-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/a7699cc33588/materials-12-00041-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/4facec8e124b/materials-12-00041-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/12c975fe82d2/materials-12-00041-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/dbfd77a5d6cf/materials-12-00041-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/a640011e62eb/materials-12-00041-g014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/6896c55138d2/materials-12-00041-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/660534c61797/materials-12-00041-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/b749e41de03a/materials-12-00041-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/c374f7859741/materials-12-00041-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/8574239e9ae1/materials-12-00041-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/b5a628e1e215/materials-12-00041-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/3add8c9863d9/materials-12-00041-g007a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/a4485d0f9a34/materials-12-00041-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/2d0a7174b449/materials-12-00041-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/a7699cc33588/materials-12-00041-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/4facec8e124b/materials-12-00041-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/12c975fe82d2/materials-12-00041-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/dbfd77a5d6cf/materials-12-00041-g013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7572/6337372/a640011e62eb/materials-12-00041-g014.jpg

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