Innovative Plasma Processing Group, Electronics and Photonics Research Institute , National Institute of Advanced Industrial Science and Technology (AIST) , 1-1-1 Umezono , Tsukuba , Ibaraki 305-8565 , Japan.
Nano Lett. 2019 Feb 13;19(2):739-746. doi: 10.1021/acs.nanolett.8b03769. Epub 2019 Jan 9.
We developed the forced convection (FC)-PECVD method for the synthesis of graphene, in which a specially designed blowing plasma source is used at moderate gas pressure (1-10 Torr) and the distribution of reactive radicals reaching the substrate surface can be controlled by forced convection. Self-limiting growth of graphene occurs on copper foil, and monolayer graphene growth with a few defects is achieved even at low temperatures (<400 °C). We also demonstrated the enlargement of the growth area using the scalable blowing plasma source. We expect that the FC-PECVD method overcomes the limitations of conventional low-temperature PECVD and provides a breakthrough for the achievement of industrial applications based on graphene.
我们开发了一种用于石墨烯合成的强制对流（FC）-PECVD 方法，该方法在中等气体压力（1-10 托）下使用特殊设计的吹气等离子体源，并且可以通过强制对流控制到达基底表面的反应性自由基的分布。在铜箔上发生石墨烯的自限制生长，甚至在低温（<400°C）下也可以实现具有少量缺陷的单层石墨烯生长。我们还使用可扩展的吹气等离子体源证明了生长区域的扩大。我们期望 FC-PECVD 方法克服了传统低温 PECVD 的局限性，为实现基于石墨烯的工业应用提供了突破。
