Center for Nanochemistry (CNC), Academy for Advanced Interdisciplinary Studies, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China.
Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing, 100871, China.
Adv Mater. 2018 Feb;30(8). doi: 10.1002/adma.201704839. Epub 2018 Jan 10.
Plasma-enhanced chemical vapor deposition (PECVD) is an applicable route to achieve low-temperature growth of graphene, typically shaped like vertical nanowalls. However, for transparent electronic applications, the rich exposed edges and high specific surface area of vertical graphene (VG) nanowalls can enhance the carrier scattering and light absorption, resulting in high sheet resistance and low transmittance. Thus, the synthesis of laid-down graphene (LG) is imperative. Here, a Faraday cage is designed to switch graphene growth in PECVD from the vertical to the horizontal direction by weakening ion bombardment and shielding electric field. Consequently, laid-down graphene is synthesized on low-softening-point soda-lime glass (6 cm × 10 cm) at ≈580 °C. This is hardly realized through the conventional PECVD or the thermal chemical vapor deposition methods with the necessity of high growth temperature (1000 °C-1600 °C). Laid-down graphene glass has higher transparency, lower sheet resistance, and much improved macroscopic uniformity when compare to its vertical graphene counterpart and it performs better in transparent heating devices. This will inspire the next-generation applications in low-cost transparent electronics.
等离子体增强化学气相沉积（PECVD）是实现石墨烯低温生长的一种可行途径，通常呈垂直纳米墙的形状。然而，对于透明电子应用来说，丰富的暴露边缘和高比表面积的垂直石墨烯（VG）纳米墙会增强载流子散射和光吸收，导致高电阻和低透过率。因此，合成平铺石墨烯（LG）势在必行。在这里，设计了一个法拉第笼，通过削弱离子轰击和屏蔽电场，使 PECVD 中的石墨烯生长从垂直方向转变为水平方向。因此，在软化点较低的钠钙玻璃（6cm×10cm）上约 580°C 时合成了平铺石墨烯。这很难通过传统的 PECVD 或热化学气相沉积方法实现，因为这些方法需要较高的生长温度（1000°C-1600°C）。与垂直石墨烯相比，平铺石墨烯玻璃具有更高的透明度、更低的电阻和大大提高的宏观均匀性，在透明加热器件中表现更好。这将激发低成本透明电子产品的下一代应用。
