Department of Physics, California Institute of Technology, Pasadena, CA 91125, United States of America. Kavli Nanoscience Institute, California Institute of Technology, Pasadena, CA 91125, United States of America.
Nanotechnology. 2019 Apr 19;30(16):162001. doi: 10.1088/1361-6528/aafdbf. Epub 2019 Jan 11.
The realization of many promising technological applications of graphene and graphene-based nanostructures depends on the availability of reliable, scalable, high-yield and low-cost synthesis methods. Plasma enhanced chemical vapor deposition (PECVD) has been a versatile technique for synthesizing many carbon-based materials, because PECVD provides a rich chemical environment, including a mixture of radicals, molecules and ions from hydrocarbon precursors, which enables graphene growth on a variety of material surfaces at lower temperatures and faster growth than typical thermal chemical vapor deposition. Here we review recent advances in the PECVD techniques for synthesis of various graphene and graphene-based nanostructures, including horizontal growth of monolayer and multilayer graphene sheets, vertical growth of graphene nanostructures such as graphene nanostripes with large aspect ratios, direct and selective deposition of monolayer and multi-layer graphene on nanostructured substrates, and growth of multi-wall carbon nanotubes. By properly controlling the gas environment of the plasma, it is found that no active heating is necessary for the PECVD growth processes, and that high-yield growth can take place in a single step on a variety of surfaces, including metallic, semiconducting and insulating materials. Phenomenological understanding of the growth mechanisms are described. Finally, challenges and promising outlook for further development in the PECVD techniques for graphene-based applications are discussed.
许多有前途的石墨烯和基于石墨烯的纳米结构技术应用的实现取决于可靠、可扩展、高产率和低成本的合成方法的可用性。等离子体增强化学气相沉积（PECVD）是合成许多碳基材料的通用技术，因为 PECVD 提供了丰富的化学环境，包括烃前体的自由基、分子和离子的混合物，这使得在较低温度下和比典型的热化学气相沉积更快的生长速度在各种材料表面上生长石墨烯成为可能。在这里，我们回顾了 PECVD 技术在合成各种石墨烯和基于石墨烯的纳米结构方面的最新进展，包括单层和多层石墨烯片的水平生长、具有大纵横比的石墨烯纳米结构（如石墨烯纳米带）的垂直生长、单层和多层石墨烯在纳米结构衬底上的直接和选择性沉积，以及多壁碳纳米管的生长。通过适当控制等离子体的气体环境，发现 PECVD 生长过程不需要主动加热，高产率的生长可以在各种表面上一步完成，包括金属、半导体和绝缘材料。描述了对生长机制的现象学理解。最后，讨论了进一步发展 PECVD 技术在基于石墨烯的应用方面的挑战和有希望的前景。
