Jin Jingcheng, Zhang Dongping, Qin Xiaonan, Yang Yu, Huang Ying, Guan Huan, He Qicong, Fan Ping, Lv Weizhong
Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, Shenzhen University, Shenzhen 518060, China.
Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
Nanomaterials (Basel). 2019 Jan 16;9(1):102. doi: 10.3390/nano9010102.
Ar/O plasma irradiation is proposed for post-treatment of vanadium dioxide (VO₂) films. Oxidation and surface migration were observed in the VO₂ films following irradiation. This combined effect leads to an effective stoichiometry refinement and microstructure reconstruction in the interfacial area. A notable improvement in luminous transmittance and an enhancement in phase transition performance of the treated VO₂ films were achieved. Compared with that of as-deposited VO₂ films, the electrical phase transition amplitude of treated films increased more than two-fold. The relative improvement in luminous transmittance (380⁻780 nm) is 47.4% (from 25.1% to 37%) and the increase in solar transmittance is 66.9% (from 29.9% to 49.9%), which is comparable to or better than the previous work using anti-reflection (AR) coatings or doping methods. The interfacial boundary state proved to be crucial and Ar/O plasma irradiation offers an effective approach for further refinement of thermochromic VO₂ films.
有人提出用氩/氧等离子体辐照对二氧化钒（VO₂）薄膜进行后处理。辐照后在VO₂薄膜中观察到了氧化和表面迁移现象。这种综合效应导致界面区域的化学计量比有效细化和微观结构重建。处理后的VO₂薄膜的发光透射率有显著提高，相变性能也得到增强。与沉积态VO₂薄膜相比，处理后薄膜的电相变幅度增加了两倍多。发光透射率（380⁻780纳米）的相对提高为47.4%（从25.1%提高到37%），太阳透射率的增加为66.9%（从29.9%提高到49.9%），这与之前使用抗反射（AR）涂层或掺杂方法的工作相当或更好。界面边界状态被证明至关重要，氩/氧等离子体辐照为进一步优化热致变色VO₂薄膜提供了一种有效方法。
