School of Physics, Southeast University, Nanjing, 211189, P. R. China.
Phys Chem Chem Phys. 2019 Jan 30;21(5):2611-2618. doi: 10.1039/c8cp07305h.
Transition metal oxide semiconductors have been explored in surface-enhanced Raman scattering (SERS) active substrates, yet their detection sensitivity and enhancement effects are inferior. What's more, the reported fabrication technique ignored the effects of the electromagnetic mechanisms and was far from satisfactory for practical applications. Herein, we report on a convenient nanotechnique to fabricate large-area hexagon plum-blossom-like WO3-x nanoarrays based on aluminum nanobowl array substrates. Localized surface plasmon resonance can be increased via adjusting the time of tungsten magnetron sputtering with H2 annealing treatment. The introduction of a double-switch experiment demonstrates that localized surface plasmon-coupled photoinduced charge transfer can not only increase SERS enhancement comparable to similar silver nanostructures but also implement a low limit of detection below 10-9 M. A triple-switch experiment offers specific rules in the molecular detection of WO3-x semiconductors and important guidance for the fabrication of SERS-active semiconducting platforms.
过渡金属氧化物半导体已被探索用于表面增强拉曼散射(SERS)活性衬底,但它们的检测灵敏度和增强效果较差。更重要的是,报道的制造技术忽略了电磁机制的影响,远远不能满足实际应用的需要。在这里,我们报告了一种方便的纳米技术,基于铝纳米碗阵列衬底制备大面积的六边形梅花状 WO3-x 纳米阵列。通过调整氢气退火处理的钨磁控溅射时间,可以增加局域表面等离子体共振。双开关实验的引入表明,局域表面等离子体耦合光致电荷转移不仅可以增加与类似银纳米结构相当的 SERS 增强,而且可以实现低于 10-9 M 的低检测极限。三开关实验为 WO3-x 半导体的分子检测提供了具体的规则,并为 SERS 活性半导体平台的制造提供了重要的指导。