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基于聚(N-乙烯基己内酰胺)/氧化石墨烯复合薄膜的温度诱导安培型葡萄糖生物传感器。

Temperature-induced amperometric glucose biosensor based on a poly(N-vinylcaprolactam)/graphene oxide composite film.

机构信息

Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education, College of Chemistry, Xiangtan University, Xiangtan 411105, People's Republic of China.

出版信息

Analyst. 2019 Mar 11;144(6):1960-1967. doi: 10.1039/c8an02039f.

DOI:10.1039/c8an02039f
PMID:30694261
Abstract

A temperature-induced sensing film consisting of poly(N-vinylcaprolactam) (PVCL), graphene oxide (GO) and glucose oxidase (GOD) was fabricated and used to modify a glassy carbon electrode (GCE). The PVCL/GO/GOD/GCE composite film was characterized by electrochemical impedance spectroscopy (EIS). The morphological properties of the composite were investigated by scanning electron microscopy (SEM). The direct electron transfer (DET) of GOD was achieved. GOD at PVCL/GO/GOD/GCE exhibited a couple of well-defined redox peaks with a formal potential of -0.432 V (vs. Ag/AgCl). The composite film showed temperature-induced catalytic activity towards glucose. Large peak currents were observed by amperometry at -0.39 V (vs. Ag/AgCl) when the temperature was above the lower critical solution temperature (LCST) of PVCL, and then disappeared when it was below the LCST. The modified electrode displayed an excellent electrocatalytic response to glucose. The detection of glucose with the composite film ranged from 0.1 to 1.7 mmol L-1 above 35 °C. The constructed biosensor also possesses good stability, reproducibility and anti-interference ability.

摘要

一种由聚(N-乙烯基己内酰胺)(PVCL)、氧化石墨烯(GO)和葡萄糖氧化酶(GOD)组成的温度感应传感膜被制备并用于修饰玻碳电极(GCE)。通过电化学阻抗谱(EIS)对 PVCL/GO/GOD/GCE 复合膜进行了表征。通过扫描电子显微镜(SEM)研究了复合膜的形态特性。实现了 GOD 的直接电子转移(DET)。在 PVCL/GO/GOD/GCE 上,GOD 呈现出一对具有明确氧化还原峰的峰,其形式电位为-0.432 V(相对于 Ag/AgCl)。当温度高于聚(N-乙烯基己内酰胺)的下限临界溶液温度(LCST)时,复合膜对葡萄糖表现出温度诱导的催化活性,在温度低于 LCST 时,大的峰电流通过安培法在-0.39 V(相对于 Ag/AgCl)处被观察到,然后消失。修饰电极对葡萄糖表现出优异的电催化响应。在 35°C 以上,复合膜对葡萄糖的检测范围为 0.1 至 1.7 mmol L-1。构建的生物传感器还具有良好的稳定性、重现性和抗干扰能力。

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