采用裂纹定义的掩模光刻技术实现单纳米线器件的可扩展制造。

Scalable Manufacturing of Single Nanowire Devices Using Crack-Defined Shadow Mask Lithography.

机构信息

Department of Micro and Nanosystems, School of Electrical Engineering and Computer Science , KTH Royal Institute of Technology , SE-10044 Stockholm , Sweden.

出版信息

ACS Appl Mater Interfaces. 2019 Feb 27;11(8):8217-8226. doi: 10.1021/acsami.8b19410. Epub 2019 Feb 13.

Abstract

Single nanowires (NWs) have a broad range of applications in nanoelectronics, nanomechanics, and nanophotonics, but, to date, no technique can produce single sub-20 nm wide NWs with electrical connections in a scalable fashion. In this work, we combine conventional optical and crack lithographies to generate single NW devices with controllable and predictable dimensions and placement and with individual electrical contacts to the NWs. We demonstrate NWs made of gold, platinum, palladium, tungsten, tin, and metal oxides. We have used conventional i-line stepper lithography with a nominal resolution of 365 nm to define crack lithography structures in a shadow mask for large-scale manufacturing of sub-20 nm wide NWs, which is a 20-fold improvement over the resolution that is possible with the utilized stepper lithography. Overall, the proposed method represents an effective approach to generate single NW devices with useful applications in electrochemistry, photonics, and gas- and biosensing.

摘要

单根纳米线 (NW) 在纳米电子学、纳机械学和纳米光子学中有广泛的应用,但迄今为止,没有任何技术可以以可扩展的方式生产具有电连接的单根亚 20nm 宽 NW。在这项工作中,我们结合传统的光学和刻蚀光刻技术,生成具有可控和可预测尺寸和位置的单根 NW 器件,并具有与 NW 的单个电接触。我们展示了由金、铂、钯、钨、锡和金属氧化物制成的 NW。我们使用标称分辨率为 365nm 的常规 i 线步进光刻机,在阴影掩模中定义刻蚀光刻结构,用于大规模制造亚 20nm 宽的 NW,这比所使用的步进光刻机的分辨率提高了 20 倍。总的来说,所提出的方法代表了一种有效的方法,可以生成具有在电化学、光子学以及气体和生物传感方面有用应用的单根 NW 器件。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/265f/6426283/29320fdc9102/am-2018-194104_0001.jpg

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