Division of Advanced Materials , Korea Research Institute of Chemical Technology (KRICT) , 141 Gajeong-Ro, Yuseong-Gu, Daejeon 34114 , Republic of Korea.
Department of Materials Science and Engineering , Chungnam National University , Daejeon 34134 , Republic of Korea.
ACS Appl Mater Interfaces. 2019 Feb 27;11(8):8234-8241. doi: 10.1021/acsami.8b20035. Epub 2019 Feb 15.
Fully "Erase-free" multi-bit operation was demonstrated in a W/HfO/TiN-stacked resistive switching device. The term Erase-free means that a digital state in a multi-bit operation can be achieved without initializing the device resistance state when the device moves to another digital state. Because initializing the resistance state of a resistive switching device causes high energy consumption, omitting this sequence can achieve energy efficient multi-bit operation during rewriting of the resistance state of the device. Experimentally, an operational energy savings of up to 75% was confirmed. For stable and reliable Erase-free operation, several prerequisites are required, such as gradual resistance change with electric pulse stimuli during both writing and erasing, predictable operational voltages for certain resistance states, and high reliability of resistive switching. These prerequisites could be achieved by adopting a W top electrode in a W/HfO/TiN-stacked resistive switching device. These results can pave the way to future nonvolatile memory applications.
在 W/HfO/TiN 堆叠式阻变器件中实现了完全“无擦除”多比特操作。“无擦除”是指在器件切换到另一个数字状态时，无需初始化器件电阻状态即可实现多比特操作中的数字状态。由于初始化阻变器件的电阻状态会导致能量消耗较高，因此省略此步骤可以在器件电阻状态重写期间实现节能的多比特操作。实验证实，操作能量可节省高达 75%。为了实现稳定可靠的“无擦除”操作，需要满足几个前提条件，例如在写入和擦除过程中电脉冲刺激下的电阻逐渐变化、特定电阻状态的可预测操作电压以及阻变的高可靠性。通过在 W/HfO/TiN 堆叠式阻变器件中采用 W 顶电极，可以满足这些前提条件。这些结果为未来的非易失性存储器应用铺平了道路。
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