Shin Dong Hoon, Park Hyungjun, Ghenzi Néstor, Kim Yeong Rok, Cheong Sunwoo, Shim Sung Keun, Yim Seongpil, Park Tae Won, Song Haewon, Lee Jung Kyu, Kim Byeong Su, Park Taegyun, Hwang Cheol Seong
Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea.
Universidad de Avelleneda UNDAV and Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Mario Bravo 1460, Avellaneda, Buenos Aires 1872, Argentina.
ACS Appl Mater Interfaces. 2024 Apr 3;16(13):16462-16473. doi: 10.1021/acsami.3c19523. Epub 2024 Mar 21.
Higher functionality should be achieved within the device-level switching characteristics to secure the operational possibility of mixed-signal data processing within a memristive crossbar array. This work investigated electroforming-free Ta/HfO/RuO resistive switching devices for digital- and analog-type applications through various structural and electrical analyses. The multiphase reset behavior, induced by the conducting filament modulation and oxygen vacancy generation (annihilation) in the HfO layer by interacting with the Ta (RuO) electrode, was utilized for the switching mode change. Therefore, a single device can manifest stable binary switching between low and high resistance states for the digital mode and the precise 8-bit conductance modulation (256 resistance values) via an optimized pulse application for the analog mode. An in-depth analysis of the operation in different modes and comparing memristors with different electrode structures validate the proposed mechanism. The Ta/HfO/RuO resistive switching device is feasible for a mixed-signal processable memristive array.
应在器件级开关特性内实现更高的功能，以确保忆阻交叉阵列内混合信号数据处理的操作可能性。这项工作通过各种结构和电学分析，研究了用于数字和模拟类型应用的无电形成Ta/HfO/RuO电阻开关器件。通过与Ta（RuO）电极相互作用，由HfO层中的导电细丝调制和氧空位产生（湮灭）引起的多相复位行为被用于切换模式的改变。因此，单个器件可以在数字模式下在低电阻状态和高电阻状态之间表现出稳定的二进制切换，并通过针对模拟模式的优化脉冲应用实现精确的8位电导调制（256个电阻值）。对不同模式下的操作进行深入分析，并将忆阻器与不同电极结构进行比较，验证了所提出的机制。Ta/HfO/RuO电阻开关器件对于可混合信号处理的忆阻阵列是可行的。
