Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, 151-744, Korea.
Hewlett-Packard Laboratories, Hewlett-Packard Company, Palo Alto, CA, 94304, USA.
Adv Mater. 2015 Jul 1;27(25):3811-6. doi: 10.1002/adma.201501167. Epub 2015 May 13.
Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel-cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming-free, self-rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, low power consumption, long-term reliability, and only an electronic switching mechanism, without an ionic-motion-related mechanism.
提出了一种具有新电路设计的 Pt/Ta2 O5 /HfO2- x /Ti 电阻式开关存储器，作为成功替代多层单元 (MLC) NAND 闪存的可行候选者。该器件具有以下特点：3 位 MLC、无电成型、自整流、比互连线电阻高得多的单元电阻、低电压操作、低功耗、长期可靠性，以及仅具有电子开关机制，而没有与离子运动相关的机制。
Zotero 插件