McCrory Duane J, Anders Mark A, Ryan Jason T, Shrestha Pragya R, Cheung Kin P, Lenahan Patrick M, Campbell Jason P
Nanoscale Device Characterization Division, National Institute of Standards and Technology, 100 Bureau Drive, MS 8120, Gaithersburg, Maryland 20899, USA.
Engineering Science and Mechanics, Pennsylvania State University, 101 EES Building, University Park, Pennsylvania 16801, USA.
Rev Sci Instrum. 2019 Jan;90(1):014708. doi: 10.1063/1.5053665.
We report on a novel electron paramagnetic resonance (EPR) technique that merges electrically detected magnetic resonance (EDMR) with a conventional semiconductor wafer probing station. This union, which we refer to as wafer-level EDMR (WL-EDMR), allows EDMR measurements to be performed on an unaltered, fully processed semiconductor wafer. Our measurements replace the conventional EPR microwave cavity or resonator with a very small non-resonant near-field microwave probe. Bipolar amplification effect, spin dependent charge pumping, and spatially resolved EDMR are demonstrated on various planar 4H-silicon carbide metal-oxide-semiconductor field-effect transistor (4H-SiC MOSFET) structures. 4H-SiC is a wide bandgap semiconductor and the leading polytype for high-temperature and high-power MOSFET applications. These measurements are made via both "rapid scan" frequency-swept EDMR and "slow scan" frequency swept EDMR. The elimination of the resonance cavity and incorporation with a wafer probing station greatly simplifies the EDMR detection scheme and offers promise for widespread EDMR adoption in semiconductor reliability laboratories.
我们报道了一种新型电子顺磁共振（EPR）技术，该技术将电检测磁共振（EDMR）与传统的半导体晶圆探测站相结合。我们将这种结合称为晶圆级EDMR（WL-EDMR），它允许在未经改变的、完全加工好的半导体晶圆上进行EDMR测量。我们的测量使用一个非常小的非谐振近场微波探头取代了传统的EPR微波腔或谐振器。在各种平面4H-碳化硅金属氧化物半导体场效应晶体管（4H-SiC MOSFET）结构上展示了双极放大效应、自旋相关电荷泵浦和空间分辨EDMR。4H-SiC是一种宽带隙半导体，是高温和高功率MOSFET应用的主要多型体。这些测量通过“快速扫描”频率扫描EDMR和“慢速扫描”频率扫描EDMR进行。去除谐振腔并与晶圆探测站结合极大地简化了EDMR检测方案，并为在半导体可靠性实验室中广泛采用EDMR带来了希望。
