McCrory Duane J, Anders Mark A, Ryan Jason T, Shrestha Pragya R, Cheung Kin P, Lenahan Patrick M, Campbell Jason P
Engineering Science and Mechanics Department, Pennsylvania State University, University Park, PA 16802 USA.
Engineering Physics Division, NIST, Gaithersburg, MD 20874 USA.
IEEE Trans Device Mater Reliab. 2018;18. doi: 10.1109/TDMR.2018.2817341.
We report on a novel semiconductor reliability technique that incorporates an electrically detected magnetic resonance (EDMR) spectrometer within a conventional semiconductor wafer probing station. EDMR is an ultrasensitive electron paramagnetic resonance technique with the capability to provide detailed physical and chemical information about reliability limiting defects in semiconductor devices. EDMR measurements have generally required a complex apparatus, not typically found in solid-state electronics laboratories. The union of a semiconductor probing station with EDMR allows powerful analytical measurements to be performed within individual devices at the wafer level. Our novel approach replaces the standard magnetic resonance microwave cavity or resonator with a small non- resonant near field microwave probe. Using this new approach we have demonstrated bipolar amplification effect and spin dependent charge pumping in various SiC based MOSFET structures. Although our studies have been limited to SiC based devices, the approach will be widely applicable to other types of MOSFETs, bipolar junction transistors, and various memory devices. The replacement of the resonance cavity with the very small non- resonant microwave probe greatly simplifies the EDMR detection scheme and allows for the incorporation of this powerful tool with a wafer probing station. We believe this scheme offers great promise for widespread utilization of EDMR in semiconductor reliability laboratories.
我们报道了一种新型半导体可靠性技术，该技术将电检测磁共振（EDMR）光谱仪集成到传统的半导体晶圆探测台中。EDMR是一种超灵敏的电子顺磁共振技术，能够提供有关半导体器件中限制可靠性的缺陷的详细物理和化学信息。EDMR测量通常需要复杂的设备，而这种设备在固态电子实验室中并不常见。将半导体探测台与EDMR结合，使得在晶圆级的单个器件内能够进行强大的分析测量。我们的新方法用一个小型非共振近场微波探头取代了标准的磁共振微波腔或谐振器。使用这种新方法，我们已经在各种基于碳化硅的金属氧化物半导体场效应晶体管（MOSFET）结构中证明了双极放大效应和自旋相关电荷泵浦。尽管我们的研究仅限于基于碳化硅的器件，但该方法将广泛适用于其他类型的MOSFET、双极结型晶体管和各种存储器件。用非常小的非共振微波探头取代共振腔极大地简化了EDMR检测方案，并使得这个强大的工具能够与晶圆探测台结合。我们相信，这种方案为EDMR在半导体可靠性实验室中的广泛应用带来了巨大的前景。
